scholarly journals Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy

2015 ◽  
Vol 86 (4) ◽  
pp. 046107 ◽  
Author(s):  
Anthony G. Fowler ◽  
Mohammad Maroufi ◽  
S. O. Reza Moheimani
Keyword(s):  
Atomic Force Microscopy ◽  
Microelectromechanical Systems ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
On Chip

MEMS Nanopositioner for Lissajous-Scan Atomic Force Microscopy

2014 ◽  
Author(s):  
Anthony G. Fowler ◽  
Mohammad Maroufi ◽  
Ali Bazaei ◽  
S. O. Reza Moheimani
Keyword(s):  
Atomic Force Microscopy ◽  
High Speed ◽  
Closed Loop ◽  
Silicon On Insulator ◽  
Contact Mode ◽  
Electrostatic Actuators ◽  
Force Microscopy ◽  
Atomic Force ◽  
Internal Model Controller ◽  
On Chip

This paper presents a new silicon-on-insulator-based MEMS nanopositioner that is designed for high-speed on-chip atomic force microscopy (AFM). The device features four electrostatic actuators in a 2-DOF configuration that allows bidirectional actuation of a central stage along two orthogonal axes with displacements greater than ±10μm. The x- and y-axis resonant modes of the stage are located at 1274Hz and 1286Hz, respectively. Integrated electrothermal sensors are used to control the system in closed loop, with a damping controller and an internal model controller being implemented for each axis. The performance of the closed-loop system is demonstrated by performing a 20μm×20μm contact-mode AFM scan via a Lissajous scan trajectory with a 410Hz sinusoidal reference.

On-Chip Dynamic Mode Atomic Force Microscopy: A Silicon-on-Insulator MEMS Approach

2017 ◽  
Vol 26 (1) ◽  
pp. 215-225 ◽  
Author(s):  
Michael G. Ruppert ◽  
Anthony G. Fowler ◽  
Mohammad Maroufi ◽  
S. O. Reza Moheimani
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon On Insulator ◽  
Dynamic Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
On Chip ◽  
Mode Atomic Force Microscopy

Atomic force microscopy imaging using a tip-on-chip: Opening the door to integrated near field nanotools

2010 ◽  
Vol 81 (9) ◽  
pp. 093707 ◽  
Author(s):  
J. Hayton ◽  
J. Polesel-Maris ◽  
R. Demadrille ◽  
M. Brun ◽  
F. Thoyer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Near Field ◽  
Microscopy Imaging ◽  
Force Microscopy ◽  
Atomic Force ◽  
Atomic Force Microscopy Imaging ◽  
On Chip

scholarly journals High-stroke silicon-on-insulator MEMS nanopositioner: Control design for non-raster scan atomic force microscopy

2015 ◽  
Vol 86 (2) ◽  
pp. 023705 ◽  
Author(s):  
Mohammad Maroufi ◽  
Anthony G. Fowler ◽  
Ali Bazaei ◽  
S. O. Reza Moheimani
Keyword(s):  
Atomic Force Microscopy ◽  
Control Design ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Raster Scan

Fabrication of SiNWs-FET Nanostructure Via Atomic Force Microscopy Lithography

2020 ◽  
Vol 301 ◽  
pp. 103-110
Author(s):  
Nurain Najihah Alias ◽  
Khatijah Aisha Yaacob ◽  
Kuan Yew Cheong
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Silicon Nanowires ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor ◽  
P Type

The unique electrical properties of silicon nanowires (SiNWs) is one of the reasons it become an attractive transducer for biosensor nowadays. Positive (holes) and negative (electron) charge carriers from SiNWs can simply interact with either positive or negative charge of sensing target. In this paper, we have studied the fabrication of silicon nanowires field effect transistor (SiNWs-FET) nanostructure patterned on 15 Ω resistivity of p-type silicon on insulator (SOI) wafer fabricated via atomic force microscopy lithography technique. To fabricate SiNWs-FET nanostructure, a conductive AFM tip, Cr/Pt cantilever tip, was used then various value of applied voltage, writing speed and relative humidity were studied. Subsequent, followed by wet etching processes, admixture of tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) were used to remove the undesired of silicon layer and diluted hydrofluoric acid (HF) was used to remove the oxide layer. From the results, it shows that, cantilever tip at 9 V with 0.4 μm/s writing speed and relative humidity between 55% - 60% gives the best formation of silicon oxide to fabricate SiNWs-FET nanostructure.

Characterization of Different Sequences of DNA on Si Substrate by Atomic Force Microscopy and Gold Nanoparticle Labeling

2007 ◽  
Vol 7 (2) ◽  
pp. 418-423 ◽  
Author(s):  
Rong Jin ◽  
Xiaoxiao He ◽  
Kemin Wang ◽  
Liu Yang ◽  
Huimin Li ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Atomic Force Microscopy ◽  
Single Strand ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging ◽  
On Chip ◽  
Micrometer Scale

In this paper, different sequences of single-strand DNA modified on Si substrate were studied taking advantages of the high resolution of atomic force microscopy (AFM) and signal enhancement of gold nanoparticles. Two sequences of single-strand DNA, as a model, were immobilized on Si substrate and hybridized with their sequence-complementary DNA molecules modified respectively with two sizes of gold nanoparticles. The surface of Si substrate was characterized through detecting the size and coverage of gold nanoparticles by AFM. Results demonstrated that different sizes of gold nanoparticles represented different sequences of DNA immobilized on the substrate. Density and distribution of DNA on Si substrate can be investigated by AFM imaging using gold nanoparticles as topographic markers. Compared to other sensitive methods such as fluorescence energy transfer, X-ray photoelectron, and radiolabeling experiments, this approach is advantageous in terms of high spatial resolution in sub-micrometer scale. This new method will be beneficial in the characterization of DNA immobilized on chip surfaces.

A Sample Preparation Technique to Localize Gate Oxide Defects in Memory Arrays Using Conducting Atomic Force Microscopy

2011 ◽  
Author(s):  
Lakshminarayanan Lakshmanan ◽  
Lowell Herlinger ◽  
Kathryn Miller
Keyword(s):  
Atomic Force Microscopy ◽  
Sample Preparation ◽  
Gate Oxide ◽  
Silicon On Insulator ◽  
Preparation Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sample Preparation Technique ◽  
Oxide Defects ◽  
Preparation Techniques

Abstract Shrinking gate lengths have led to increased challenges in isolating defects using conventional physical failure analysis methods. Conducting atomic force microscopy (CAFM) has been proven to be a powerful tool to isolate gate oxide defects in silicon-on-insulator devices. Some sample preparation techniques of exposing polysilicon and gate oxide, which were critical to perform CAFM scan, are discussed in this paper.

Application of focused ion-beam sampling for sidewall-roughness measurement of free-standing sub-μm objects by atomic force microscopy

Microscopy ◽  
2020 ◽  
Vol 69 (1) ◽  
pp. 11-16
Author(s):  
Takaharu Nagatomi ◽  
Tatsuya Nakao ◽  
Yoko Fujimoto
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Focused Ion Beam ◽  
Microelectromechanical Systems ◽  
Ion Beam ◽  
Sampling Technique ◽  
Roughness Parameters ◽  
Free Standing ◽  
Force Microscopy ◽  
Atomic Force

Abstract In the present study, a free-standing object-sampling technique for microelectromechanical systems (MEMS) is developed to measure their sidewall surface roughnesses by atomic force microscopy (AFM). For this purpose, a conventional focused ion beam (FIB) sampling technique widely used for cross-sectional transmission electron microscope specimen preparation was applied. The sub-nm-order roughness parameters were quantitatively measured for sidewalls of Si-bridge test samples. The roughness parameters were compared before and after H2 annealing treatment, which induced smoothing of the surface by migration of the Si atoms. The reduction in the surface roughness by a factor of approximately one-third with 60-s H2 annealing was quantitatively evaluated by AFM. The present study confirms that the developed FIB–AFM technique is one potential approach for quantitatively evaluating the surface-roughness parameters on the oblique faces of free-standing objects in MEMS devices.

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