High second-order nonlinearity by p-n junction formation in plasma enhanced chemical vapor deposition deposited hydrogenated amorphous silicon thin films

2015 ◽  
Vol 106 (6) ◽  
pp. 061905 ◽  
Author(s):  
Qiming Liu ◽  
Guoxing Wu ◽  
Mingliang Wang ◽  
Xiujian Zhao ◽  
Jincheng Du
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Junction Formation ◽  
Hydrogenated Amorphous ◽  
Second Order Nonlinearity

Effect of Ge Incorporation on Hydrogenated Amorphous Silicon Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 569 ◽  
pp. 27-30
Author(s):  
Bao Jun Yan ◽  
Lei Zhao ◽  
Ben Ding Zhao ◽  
Jing Wei Chen ◽  
Hong Wei Diao ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium thin films (a-SiGe:H) were prepared via plasma enhanced chemical vapor deposition (PECVD). By adjusting the flow rate of GeH4, a-SiGe:H thin films with narrow bandgap (Eg) were fabricated with high Ge incorporation. It was found that although narrow Eg was obtained, high Ge incorporation resulted in a great reduction of the thin film photosensitivity. This degradation was attributed to the increase of polysilane-(SiH2)n, which indicated a loose and disordered microstructure, in the films by systematically investigating the optical, optoelectronic and microstructure properties of the prepared a-SiGe:H thin films via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. Such investigation provided a helpful guide for further preparing narrow Eg a-SiGe:H materials with good optoelectronic properties.

Luminescence Quenching in Erbium-Doped Hydrogenated Amorphous Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
Jung H. Shin ◽  
R. Serna ◽  
G. N. Van Den Hovenb ◽  
W. G. J. H. M. van Sark ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Amorphous Materials ◽  
Radiative Decay ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Excitation Model ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon thin films, co-doped with oxygen, are made using lowpressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD). The films are implanted with Er to a peak concentration of 0.2 at.%. Roomtemperature photoluminescence at 1.54 μm is observed in both amorphous materials, after thermal annealing at 300–400 °C. The PECVD films with low 0 content (0.3, 1.3 at.%) show a luminescence intensity quenching by a factor 7–15 as the temperature is raised from 10 K to room temperature. The quenching is well correlated with a decrease in luminescence lifetime, indicating that non-radiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. In the LPCVD films, with 31 at.% 0, the quenching is only a factor 3, and no lifetime quenching is observed. The results are interpreted in the context of an impurity Auger excitation model, taking into account the fact that oxygen modifies the Si bandgap and the Er-related defect levels in the gap.

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