Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

2015 ◽  
Vol 106 (2) ◽  
pp. 022104 ◽  
Author(s):  
Z. Zhang ◽  
A. R. Arehart ◽  
E. C. H. Kyle ◽  
J. Chen ◽  
E. X. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Effects ◽  
P Type ◽  
Mg Doped

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

Si and Mg Doped Gan Layers Grown by Gas Source Molecular Beam Epitaxy Using Ammonia

1997 ◽  
Vol 482 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray ◽  
Sapphire Substrates ◽  
Gas Source ◽  
P Type ◽  
Mg Doped

AbstractThe growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830°C with growth rates larger than 1 μm/h. Optical properties are characteristics of high quality GaN material and the linewidth of x-ray diffraction (0002) rocking curve is less than 350 arcsec. N- and p-type doping were achieved by using solid sources of Si and Mg. No post-growth annealing was needed to activate the Mg acceptors. As-grown GaN:Mg layers exhibit hole concentrations of 3×1017 cm−3and mobilities of 8 cm2/Vs at 300 K. Light emitting diodes (LEDs) based on GaN p-n homojunction have been processed. The turn on voltage is 3 V and the forward voltage is 3.7 V at 20 mA. The 300 K electroluminescence (EL) peaks at 390 nm.

Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy

2007 ◽  
Vol 244 (6) ◽  
pp. 1867-1871 ◽  
Author(s):  
A. Armstrong ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
S. A. Ringel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source

1995 ◽  
Vol 395 ◽  
Author(s):  
Z. Yang ◽  
L.K. Li ◽  
W.I. Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Luminescent Properties ◽  
Nitrogen Plasma ◽  
Organic Chemical ◽  
Hole Density ◽  
P Type ◽  
Mg Doped

ABSTRACTThe electrical and luminescent properties of Mg-doped GaN films grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source have been investigated. Due to their different growth environments, the Mg-doped GaN films grown by MBE using ammonia exhibited properties that were different from similar films grown by metal-organic chemical vapor deposition (MOCVD). It has been found that the introduction of positive charges during growth is important in the achievement of p-type Mg-doped GaN grown by MBE using ammonia. With the introduction of a moderate nitrogen plasma, we have achieved p-type Mg-doped GaN films with a hole density of 4×1017 cm−3 and a mobility of 15 cm2/V-s at room temperature.

Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy

2010 ◽  
Vol 7 (10) ◽  
pp. 2498-2501 ◽  
Author(s):  
S. Mitsuyoshi ◽  
K. Umeno ◽  
Y. Furukawa ◽  
N. Urakami ◽  
A. Wakahara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Luminescence Properties ◽  
P Type ◽  
Mg Doped

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

2008 ◽  
Vol 103 (6) ◽  
pp. 063722 ◽  
Author(s):  
A. Armstrong ◽  
J. Caudill ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Spectroscopy ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Deep Level ◽  
Deep Levels ◽  
P Type

Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy

2001 ◽  
Vol 89 (11) ◽  
pp. 6294-6301 ◽  
Author(s):  
P. Krispin ◽  
S. G. Spruytte ◽  
J. S. Harris ◽  
K. H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy

1996 ◽  
Vol 69 (4) ◽  
pp. 559-561 ◽  
Author(s):  
Wook Kim ◽  
A. Salvador ◽  
A. E. Botchkarev ◽  
O. Aktas ◽  
S. N. Mohammad ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
P Type ◽  
Mg Doped

scholarly journals Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

2016 ◽  
Vol 119 (24) ◽  
pp. 245702 ◽  
Author(s):  
Akira Uedono ◽  
Marco Malinverni ◽  
Denis Martin ◽  
Hironori Okumura ◽  
Shoji Ishibashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Mg Doped
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