Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy

2001 ◽  
Vol 89 (11) ◽  
pp. 6294-6301 ◽  
Author(s):  
P. Krispin ◽  
S. G. Spruytte ◽  
J. S. Harris ◽  
K. H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy

2007 ◽  
Vol 244 (6) ◽  
pp. 1867-1871 ◽  
Author(s):  
A. Armstrong ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
S. A. Ringel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

2008 ◽  
Vol 103 (6) ◽  
pp. 063722 ◽  
Author(s):  
A. Armstrong ◽  
J. Caudill ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Spectroscopy ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Deep Level ◽  
Deep Levels ◽  
P Type

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

2015 ◽  
Vol 106 (2) ◽  
pp. 022104 ◽  
Author(s):  
Z. Zhang ◽  
A. R. Arehart ◽  
E. C. H. Kyle ◽  
J. Chen ◽  
E. X. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Effects ◽  
P Type ◽  
Mg Doped

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

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