Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

2008 ◽  
Vol 103 (6) ◽  
pp. 063722 ◽  
Author(s):  
A. Armstrong ◽  
J. Caudill ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Spectroscopy ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Deep Level ◽  
Deep Levels ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

Characterization of Deep Levels in Si-DopedInxAl1-xAsLayers Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1138-1142 ◽  
Author(s):  
Alexei Malinin ◽  
Hidemasa Tomozawa ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Levels

Non‐contact electrical characterization of low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy

1991 ◽  
Vol 59 (15) ◽  
pp. 1896-1898 ◽  
Author(s):  
R. M. Park ◽  
M. B. Troffer ◽  
E. Yablonovitch ◽  
T. J. Gmitter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Low Resistivity ◽  
P Type

Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy

2007 ◽  
Vol 244 (6) ◽  
pp. 1867-1871 ◽  
Author(s):  
A. Armstrong ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
S. A. Ringel
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

Characterization of GaN p-n Junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 364 ◽  
pp. 139-143
Author(s):  
Radzali Rosfariza ◽  
Anas Ahmad Mohd ◽  
Hassan Zainuriah ◽  
Norzaini Zainal ◽  
Fong Kwong Yam ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Sem Image ◽  
Raman Measurement ◽  
P Type ◽  
Sharp Interfaces

In this report, the growth of GaN p-n junction on Si (111) substrate by plasma-assisted molecular beam epitaxy (PAMBE) is demonstrated. Doping of the GaN p-n junction has been carried out using Si and Mg as n-type and p-type dopants, respectively. Silicon substrate is used to grow the GaNpn-junction. In order to improve the crystalline quality of the nitride based junction, AlN is used as a buffer layer. The optical properties of the sample have been characterized by photoluminescence (PL) and Raman spectroscopy.PL spectrum shows a strong band edge emission of GaN at ~364nm, indicating good quality of the sample.The presence of peak ~657cm-1in Raman measurement has exhibited asuccessful doping of Mg in the sample. The structural properties are measured by high-resolution x-ray diffraction (HR-XRD) and scanning electron microscopy (SEM). The cross section of the SEM image of the sample has shown sharp interfaces.

scholarly journals Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

2002 ◽  
Vol 81 (10) ◽  
pp. 1830-1832 ◽  
Author(s):  
D. C. Look ◽  
D. C. Reynolds ◽  
C. W. Litton ◽  
R. L. Jones ◽  
D. B. Eason ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
P Type

Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103707 ◽  
Author(s):  
M. Kaneko ◽  
T. Hashizume ◽  
V. A. Odnoblyudov ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Gas Source
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