Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

2008 ◽  
Vol 205 (5) ◽  
pp. 1074-1077 ◽  
Author(s):  
John Simon ◽  
Debdeep Jena
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
P Type ◽  
Mg Doped

Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
G. Popovici ◽  
G. Y. Xu ◽  
A. Botchkarev ◽  
W. Kim ◽  
H. Tang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Longitudinal Optical ◽  
Raman Shift ◽  
Longitudinal Optical Phonon ◽  
Photoluminescence Peak ◽  
Mg Doped

ABSTRACTRaman, photoluminescence, and Hall measurements are reported for Mg doped GaN films grown by molecular beam epitaxy. The compressive and tensile stress determined by the Raman shift of the phonon lines is due to the growth conditions rather than the presence of Mg in the film. The photoluminescence peak of near band-to-band transitions is also shifted to larger (smaller) energies by the compressive (tensile) stress. The study of the longitudinal optical phonon of the Ai branch shows that its Raman line shape is affected not only by phonon-plasmon interactions but by the crystalline quality of the film, as well.

Si and Mg Doped Gan Layers Grown by Gas Source Molecular Beam Epitaxy Using Ammonia

1997 ◽  
Vol 482 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray ◽  
Sapphire Substrates ◽  
Gas Source ◽  
P Type ◽  
Mg Doped

AbstractThe growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830°C with growth rates larger than 1 μm/h. Optical properties are characteristics of high quality GaN material and the linewidth of x-ray diffraction (0002) rocking curve is less than 350 arcsec. N- and p-type doping were achieved by using solid sources of Si and Mg. No post-growth annealing was needed to activate the Mg acceptors. As-grown GaN:Mg layers exhibit hole concentrations of 3×1017 cm−3and mobilities of 8 cm2/Vs at 300 K. Light emitting diodes (LEDs) based on GaN p-n homojunction have been processed. The turn on voltage is 3 V and the forward voltage is 3.7 V at 20 mA. The 300 K electroluminescence (EL) peaks at 390 nm.

P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source

1995 ◽  
Vol 395 ◽  
Author(s):  
Z. Yang ◽  
L.K. Li ◽  
W.I. Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Luminescent Properties ◽  
Nitrogen Plasma ◽  
Organic Chemical ◽  
Hole Density ◽  
P Type ◽  
Mg Doped

ABSTRACTThe electrical and luminescent properties of Mg-doped GaN films grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source have been investigated. Due to their different growth environments, the Mg-doped GaN films grown by MBE using ammonia exhibited properties that were different from similar films grown by metal-organic chemical vapor deposition (MOCVD). It has been found that the introduction of positive charges during growth is important in the achievement of p-type Mg-doped GaN grown by MBE using ammonia. With the introduction of a moderate nitrogen plasma, we have achieved p-type Mg-doped GaN films with a hole density of 4×1017 cm−3 and a mobility of 15 cm2/V-s at room temperature.

Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy

2010 ◽  
Vol 7 (10) ◽  
pp. 2498-2501 ◽  
Author(s):  
S. Mitsuyoshi ◽  
K. Umeno ◽  
Y. Furukawa ◽  
N. Urakami ◽  
A. Wakahara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Luminescence Properties ◽  
P Type ◽  
Mg Doped

Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1633 ◽  
pp. 13-18
Author(s):  
G. Medina ◽  
P.A. Stampe ◽  
R.J. Kennedy ◽  
R.J. Reeves ◽  
G.T. Dang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Electrical Measurements ◽  
Device Structure ◽  
Metal Semiconductor Metal ◽  
P Type

ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited significant persistent photoconductivity upon ultraviolet excitation in a metal-semiconductor-metal device structure.

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

2015 ◽  
Vol 106 (2) ◽  
pp. 022104 ◽  
Author(s):  
Z. Zhang ◽  
A. R. Arehart ◽  
E. C. H. Kyle ◽  
J. Chen ◽  
E. X. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Effects ◽  
P Type ◽  
Mg Doped

Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy

1996 ◽  
Vol 69 (4) ◽  
pp. 559-561 ◽  
Author(s):  
Wook Kim ◽  
A. Salvador ◽  
A. E. Botchkarev ◽  
O. Aktas ◽  
S. N. Mohammad ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
P Type ◽  
Mg Doped

scholarly journals Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

2016 ◽  
Vol 119 (24) ◽  
pp. 245702 ◽  
Author(s):  
Akira Uedono ◽  
Marco Malinverni ◽  
Denis Martin ◽  
Hironori Okumura ◽  
Shoji Ishibashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Mg Doped

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type
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