Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

Y. Wu; C.-Y. Chen; J. A. del Alamo

doi:10.1063/1.4905677

Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

Journal of Applied Physics ◽

10.1063/1.4905677 ◽

2015 ◽

Vol 117 (2) ◽

pp. 025707 ◽

Cited By ~ 23

Author(s):

Y. Wu ◽

C.-Y. Chen ◽

J. A. del Alamo

Keyword(s):

High Temperature ◽

Direct Current ◽

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Structural Degradation ◽

High Electron Mobility ◽

Current Stress ◽

Electron Mobility Transistors

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Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4707163 ◽

2012 ◽

Vol 100 (17) ◽

pp. 172109 ◽

Cited By ~ 22

Author(s):

Libing Li ◽

Jungwoo Joh ◽

J. A. del Alamo ◽

Carl V. Thompson

Keyword(s):

Spatial Distribution ◽

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Structural Degradation ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1856 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1856-1861 ◽

Cited By ~ 5

Author(s):

Yeong-Lin Lai ◽

Edward Y. Chang ◽

Chun-Yen Chang ◽

T. H. Liu ◽

S. P. Wang

Keyword(s):

Wireless Communication ◽

High Power ◽

Electron Mobility ◽

High Efficiency ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Power Density ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Ingaas Quantum Well

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Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

Applied Physics Letters ◽

10.1063/1.2162092 ◽

2006 ◽

Vol 88 (2) ◽

pp. 023502 ◽

Cited By ~ 8

Author(s):

S. Arulkumaran ◽

G. I. Ng ◽

C. L. Tan ◽

Z. H. Liu ◽

J. Bu ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Furnace Annealing ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Microwave Characteristics

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Large-Periphery ALGaN/GaN High Electron Mobility Transistors for High-Power Operation

2010 18th Biennial University/Government/Industry Micro/Nano Symposium ◽

10.1109/ugim.2010.5508902 ◽

2010 ◽

Author(s):

Liang Pang ◽

Zhi Zheng ◽

Hui-Chan Seo ◽

Patrick Chapman ◽

Philip Krein ◽

...

Keyword(s):

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

High Power Operation ◽

Power Operation

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Multi-Finger High Power Gallium Nitride Based High Electron Mobility Transistors

2019 6th International Conference on Electrical and Electronics Engineering (ICEEE) ◽

10.1109/iceee2019.2019.00046 ◽

2019 ◽

Author(s):

Jaya Jha ◽

Sreenadh Surapaneni ◽

Akhil Kumar S. ◽

Swaroop Ganguly ◽

Dipankar Saha

Keyword(s):

Gallium Nitride ◽

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

Journal of Applied Physics ◽

10.1063/1.4931891 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124511 ◽

Cited By ~ 5

Author(s):

Chang Zeng ◽

XueYang Liao ◽

RuGuan Li ◽

YuanSheng Wang ◽

Yiqiang Chen ◽

...

Keyword(s):

High Temperature ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

High Temperature Operation

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Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/2/029501 ◽

2012 ◽

Vol 28 (2) ◽

pp. 029501 ◽

Cited By ~ 1

Author(s):

M Lachab ◽

M Sultana ◽

H Fatima ◽

V Adivarahan ◽

Q Fareed ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions

10.1117/12.2250250 ◽

2017 ◽

Author(s):

Yongkun Sin ◽

Jeremy Bonsall ◽

Zachary Lingley ◽

Miles Brodie ◽

Maribeth Mason

Keyword(s):

High Power ◽

Electron Mobility ◽

Heavy Ions ◽

High Electron Mobility Transistors ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Current Applied Physics ◽

10.1016/j.cap.2013.04.003 ◽

2013 ◽

Vol 13 (7) ◽

pp. 1359-1364 ◽

Cited By ~ 4

Author(s):

H. Mosbahi ◽

M. Gassoumi ◽

Imen Saidi ◽

Houcine Mejri ◽

C. Gaquière ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.1479 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1479-1483 ◽

Cited By ~ 2

Author(s):

Jong-Wook Lee ◽

Almaz S. Kuliev ◽

Ilesanmi Adesida

Keyword(s):

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

X Band ◽

High Power Operation ◽

Power Operation

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