scholarly journals Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

2012 ◽  
Vol 100 (17) ◽  
pp. 172109 ◽  
Author(s):  
Libing Li ◽  
Jungwoo Joh ◽  
J. A. del Alamo ◽  
Carl V. Thompson
Keyword(s):  
Spatial Distribution ◽  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Structural Degradation ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

2006 ◽  
Vol 3 (3) ◽  
pp. 469-472
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Maruyama ◽  
T. Kosugi ◽  
T. Suemitsu ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate
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