Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

S. Arulkumaran; G. I. Ng; C. L. Tan; Z. H. Liu; J. Bu; K. Radhakrishnan; T. Aggerstam; M. Sjödin; S. Lourdudoss

doi:10.1063/1.2162092

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

Applied Physics Letters ◽

10.1063/1.2162092 ◽

2006 ◽

Vol 88 (2) ◽

pp. 023502 ◽

Cited By ~ 8

Author(s):

S. Arulkumaran ◽

G. I. Ng ◽

C. L. Tan ◽

Z. H. Liu ◽

J. Bu ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Furnace Annealing ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Microwave Characteristics

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Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.111001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 111001 ◽

Cited By ~ 33

Author(s):

Subramaniam Arulkumaran ◽

Geok Ing Ng ◽

Sahmuganathan Vicknesh ◽

Hong Wang ◽

Kian Siong Ang ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Microwave Characteristics

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Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.111001 ◽

2012 ◽

Vol 51 ◽

pp. 111001 ◽

Cited By ~ 14

Author(s):

Subramaniam Arulkumaran ◽

Geok Ing Ng ◽

Sahmuganathan Vicknesh ◽

Hong Wang ◽

Kian Siong Ang ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Microwave Characteristics

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Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3358 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3358-3363

Author(s):

Jong-Won Lim ◽

Ho-Kyun Ahn ◽

Hong-Gu Ji ◽

Woo-Jin Chang ◽

Jae-Kyoung Mun ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recessed Gate ◽

Microwave Characteristics

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Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/2/029501 ◽

2012 ◽

Vol 28 (2) ◽

pp. 029501 ◽

Cited By ~ 1

Author(s):

M Lachab ◽

M Sultana ◽

H Fatima ◽

V Adivarahan ◽

Q Fareed ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Current Applied Physics ◽

10.1016/j.cap.2013.04.003 ◽

2013 ◽

Vol 13 (7) ◽

pp. 1359-1364 ◽

Cited By ~ 4

Author(s):

H. Mosbahi ◽

M. Gassoumi ◽

Imen Saidi ◽

Houcine Mejri ◽

C. Gaquière ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/24/10/079 ◽

2007 ◽

Vol 24 (10) ◽

pp. 2998-3001 ◽

Cited By ~ 2

Author(s):

Li Miao ◽

Wang Yan

Keyword(s):

Direct Current ◽

Electron Mobility ◽

Current Model ◽

High Electron Mobility Transistors ◽

Alternating Current ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Chinese Physics B ◽

10.1088/1674-1056/22/2/027201 ◽

2013 ◽

Vol 22 (2) ◽

pp. 027201 ◽

Cited By ~ 6

Author(s):

Lei Shi ◽

Shi-Wei Feng ◽

Chun-Sheng Guo ◽

Hui Zhu ◽

Ning Wan

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Step Voltage ◽

Voltage Stress

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Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

Journal of Applied Physics ◽

10.1063/1.4905677 ◽

2015 ◽

Vol 117 (2) ◽

pp. 025707 ◽

Cited By ~ 23

Author(s):

Y. Wu ◽

C.-Y. Chen ◽

J. A. del Alamo

Keyword(s):

High Temperature ◽

Direct Current ◽

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Structural Degradation ◽

High Electron Mobility ◽

Current Stress ◽

Electron Mobility Transistors

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Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga[sub 0.51]In[sub 0.49]P/In[sub 0.15]Ga[sub 0.85]As/Ga[sub 0.51]In[sub 0.49]P pseudomorphic high electron mobility transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1322047 ◽

2000 ◽

Vol 18 (6) ◽

pp. 2615 ◽

Cited By ~ 1

Author(s):

Chih-Hung Yen ◽

Kuan-Po Lin ◽

Kuo-Hui Yu ◽

Wen-Lung Chang ◽

Kun-Wei Lin ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Sidewall Effects

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Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/27/12/125001 ◽

2012 ◽

Vol 27 (12) ◽

pp. 125001 ◽

Cited By ~ 12

Author(s):

M Lachab ◽

M Sultana ◽

H Fatima ◽

V Adivarahan ◽

Q Fareed ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

Download Full-text