Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence

Solar RRL ◽  
2016 ◽  
Vol 1 (1) ◽  
pp. 1600014 ◽  
Author(s):  
Hang Cheong Sio ◽  
Sieu Pheng Phang ◽  
Daniel Macdonald
Keyword(s):  
Grain Boundaries ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Multicrystalline Silicon

scholarly journals Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers

2014 ◽  
Vol 125 (4) ◽  
pp. 1010-1012 ◽  
Author(s):  
G. Kato ◽  
M. Tajima ◽  
F. Okayama ◽  
S. Tokumaru ◽  
R. Sato ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Oxygen Precipitation

scholarly journals Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

2007 ◽  
Vol 2007 ◽  
pp. 1-4 ◽  
Author(s):  
Mohamed Fathi
Keyword(s):  
Grain Boundaries ◽  
Process Parameters ◽  
Silicon Wafers ◽  
Etching Process ◽  
Multicrystalline Silicon ◽  
Extended Defects ◽  
Dislocation Densities ◽  
Increased Sensitivity ◽  
Small Grains ◽  
Crystalline Defect

We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrystalline silicon (mc-Si) wafers. Following experimentations and optimization of Yang and Secco etching process parameters, we have successfully revealed crystalline extended defects on mc-Si surfaces. A specific delineation process with successive application of Yang and Secco agent on the same sample has proved the increased sensitivity of Secco etch to crystalline extended defects in mc-Si materials. The exploration of delineated mc-Si surfaces indicated that strong dislocation densities are localized mainly close to the grain boundaries and on the level of small grains in size (below 1 mm). Locally, we have observed the formation of several parallel dislocation lines, perpendicular to the grain boundaries. The overlapping of several dislocations lines has revealed particular forms for etched pits of dislocations.

scholarly journals Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering

2013 ◽  
Vol 23 (1) ◽  
pp. 30-36 ◽  
Author(s):  
Yacine Boulfrad ◽  
Antti Haarahiltunen ◽  
Hele Savin ◽  
Eivind J. Øvrelid ◽  
Lars Arnberg
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon

scholarly journals About the relevance of defect features in as-cut multicrystalline silicon wafers on solar cell performance

2018 ◽  
Author(s):  
Aditya Kovvali ◽  
Matthias Demant ◽  
Theresa Trötschler ◽  
Jonas Haunschild ◽  
Stefan Rein
Keyword(s):  
Solar Cell ◽  
Silicon Wafers ◽  
Cell Performance ◽  
Multicrystalline Silicon ◽  
Solar Cell Performance
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