Study and improvement of anomalous interface states of metal‐oxide‐semiconductor structures induced by rapid thermal post‐oxide annealing
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1994 ◽
Vol 12
(1)
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pp. 342
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2002 ◽
Vol 389-393
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pp. 1005-1008
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Keyword(s):
2002 ◽
Vol 389-393
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pp. 1009-1012
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