On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon

2014 ◽  
Vol 116 (7) ◽  
pp. 073511 ◽  
Author(s):  
A. R. Zanatta ◽  
M. E. Kordesch
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Induced Crystallization

Comparison of Properties of a-Si1−x Gex:H and a-Si1−x Gex:H:F

1987 ◽  
Vol 95 ◽  
Author(s):  
K. D. Mackenzie ◽  
W. Paul
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Amorphous Si

AbstractThe structural, electrical and optical properties of amorphous Si-Ge alloys prepared either from mixtures of hydrides or of fluorides will be compared. It will be shown that the majority of many properties studied are essentially the same, the major exceptions being the structure of thin films used for TEM investigation, and the photocurrents developed between contacts in a coplanar configuration. Possible explanations for the result of including fluorine in the preparation plasma will be discussed.

Metal-induced crystallization of hydrogenated amorphous Si films

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 953-955 ◽  
Author(s):  
C.C. Tsai ◽  
R.J. Nemanich ◽  
M.J. Thompson ◽  
B.L. Stafford
Keyword(s):  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds

2006 ◽  
Vol 100 (5) ◽  
pp. 053515 ◽  
Author(s):  
Mayur S. Valipa ◽  
Saravanapriyan Sriraman ◽  
Eray S. Aydil ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Hydrogen Insertion

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

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