Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds

2006 ◽  
Vol 100 (5) ◽  
pp. 053515 ◽  
Author(s):  
Mayur S. Valipa ◽  
Saravanapriyan Sriraman ◽  
Eray S. Aydil ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Hydrogen Insertion

scholarly journals Electron microscopy study of Ni induced crystallization in amorphous Si thin films

2015 ◽  
Author(s):  
G. Z. Radnóczi ◽  
E. Dodony ◽  
G. Battistig ◽  
N. Vouroutzis ◽  
J. Stoemenos ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Amorphous Si ◽  
Induced Crystallization

Low-Temperature Ni Acetate Induced Crystallization of a-Si Thin Film by Microwave Annealing

2011 ◽  
Vol 311-313 ◽  
pp. 1779-1783 ◽  
Author(s):  
Jie Sun ◽  
Wei Ming Shi ◽  
Ping Sheng Zhou ◽  
Lin Jun Wang ◽  
Guang Pu Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Layer ◽  
Acetate Solution ◽  
Furnace Annealing ◽  
Microwave Annealing ◽  
Potential Applications ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Si Thin Film

This paper investigates a combination of Ni acetate solution induced crystallization and microwave induced crystallization of a-Si thin film. Ni acetate solution was coated over amorphous Si thin film for evenly spread of Ni metal source. The Ni inducing source was formed from Ni acetate powder dissolved in de-ionized water or ethanol. The crystallization using Ni acetate solution was a Ni-silicide mediated process, the same process used with Ni metal layer. Compared to Ni metal layer induced crystallization by conventional furnace annealing, it finds that the crystallization temperature was lowered to 450 °C and the time of crystallization was reduced. Using Ni acetate solution induced crystallization is propitious to big area crystallization. After the processing, the poly-Si grain size was found about 0.1-0.5μm. The crystallization of a-Si thin films was enhanced by applying microwaves and Ni acetate solution to the thin films. The technique that combines Ni solution induced crystallization with microwave annealing has potential applications in thin-film transistors (TFT’s) and solar cell.

Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

2021 ◽  
pp. 129723
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
I.E. Merkulova ◽  
I.V. Korolkov ◽  
V.I. Vdovin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Suboxide ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization
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