Metal-Induced Crystallization of Amorphous Si Thin Films Assisted by Atomic Layer Deposition of Nickel Oxide Layers

2011 ◽  
Vol 11 (8) ◽  
pp. 7137-7140 ◽  
Author(s):  
Byung-Soo So ◽  
Seung-Muk Bae ◽  
Yil-Hwan You ◽  
DaiHui Jo ◽  
Sun Sook Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Nickel Oxide ◽  
Atomic Layer ◽  
Oxide Layers ◽  
Metal Induced Crystallization ◽  
Layer Deposition ◽  
Amorphous Si ◽  
Induced Crystallization

Crystallization of Amorphous Si Thin Films Using Sub-nm Nickel Oxide Thin Layers Deposited by Atomic Layer Deposition

2019 ◽  
Vol 3 (15) ◽  
pp. 279-282 ◽  
Author(s):  
Byung Soo So ◽  
Wontae Cho ◽  
Yil-Hwan You ◽  
Jin-Ha Hwang ◽  
Sun Sook Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Nickel Oxide ◽  
Atomic Layer ◽  
Thin Layers ◽  
Layer Deposition ◽  
Amorphous Si

Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

2016 ◽  
Vol 611 ◽  
pp. 78-87 ◽  
Author(s):  
Manjunath Puttaswamy ◽  
Marko Vehkamäki ◽  
Kaupo Kukli ◽  
Mukesh Chandra Dimri ◽  
Marianna Kemell ◽  
...  
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Bismuth Oxide ◽  
Atomic Layer ◽  
Bismuth Iron Oxide ◽  
Oxide Thin Films ◽  
Oxide Layers ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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