scholarly journals Structural and optical properties of alumina passivated amorphous Si slanted columnar thin films during electrochemical Li-ion intercalation and deintercalation observed byin situgeneralized spectroscopic ellipsometry

2017 ◽  
Vol 35 (3) ◽  
pp. 031401
Author(s):  
Derek Sekora ◽  
Rebecca Y. Lai ◽  
Daniel Schmidt ◽  
Mathias Schubert ◽  
Eva Schubert
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Structural And Optical Properties ◽  
Li Ion ◽  
Amorphous Si ◽  
Ion Intercalation

scholarly journals Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films

2018 ◽  
Vol 12 (3) ◽  
pp. 199-208
Author(s):  
Maja Popovic ◽  
Mirjana Novakovic ◽  
Kun Zhang ◽  
Miodrag Mitric ◽  
Natasa Bibic ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Band Gap ◽  
Spectroscopic Ellipsometry ◽  
Optical Band Gap ◽  
Rutherford Backscattering Spectrometry ◽  
Structural And Optical Properties ◽  
Transmission Electron ◽  
Xrd Patterns

Polycrystalline CrN thin films were irradiated with Xe ions. The irradiation-induced modifications on structural and optical properties of the films were investigated. The CrN films were deposited on Si(100) wafers with the thickness of 280 nm, by using DC reactive sputtering. After deposition, the films were implanted at room temperature with 400 keV Xe ions with the fluences of 5-20?1015 ions/cm2. The films were then annealed at 700 ?C in vacuum for 2 h. The combination of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) was used for structural analyses, while changes in optical properties were monitored by spectroscopic ellipsometry. We also measured the electrical resistivity of the samples using a four point probe method. RBS analysis reveals that the concentration of Xe in the layers increases with ion fluence reaching the value of around 1.5 at.% for the highest ion dose, at a depth of 73 nm. XRD patterns show that the irradiation results in the decrease of the lattice constant in the range of 0.4160-0.4124 nm. Irradiation also results in the splitting of 200 line indicating the tetragonal distortion of CrN lattice. TEM studies demonstrate that after irradiation the columnar microstructure is partially destroyed within _90 nm, introducing a large amount of damage in the CrN layers. Spectroscopic ellipsometry analysis shows that the optical band gap of CrN progressively reduces from 3.47 eV to 2.51 eV with the rise in ion fluence up to 20?1015 ions/cm2. Four point probe measurements of the films indicated that as the Xe ion fluence increases, the electrical resistivity rises from 770 to 1607 ?Wcm. After post-implantation annealing crystalline grains become larger and lattice distortion disappears, which influences optical band gap values and electrical resistivity of CrN.

Structural and Optical Properties of Cu2ZnSn(SxSe1–x)4 Thin Films

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Correlation between changes in nanoscale structural and optical properties upon swift heavy ion irradiation of SiNx thin films

2021 ◽  
Vol 129 (3) ◽  
pp. 035108
Author(s):  
Harsh Gupta ◽  
Ravi K. Bommali ◽  
Santanu Ghosh ◽  
Himanshu Srivastava ◽  
Arvind Srivastava ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Structural And Optical Properties ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion
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