Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

2014 ◽  
Vol 105 (5) ◽  
pp. 053302 ◽  
Author(s):  
Bum Ho Choi ◽  
Jong Ho Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Vapor Permeation ◽  
Low Pressures ◽  
Water Vapor Permeation

Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Yan Chen ◽  
Jun Mei ◽  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Heteroepitaxial Growth ◽  
Hot Filament ◽  
Low Pressures ◽  
Gaseous Source

AbstractDiamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

scholarly journals Plasma-Enhanced Chemical Vapor Deposition of Indene for Gas Separation Membrane

2019 ◽  
Vol 19 (1) ◽  
pp. 47 ◽  
Author(s):  
Myat Kyaw ◽  
Shinsuki Mori ◽  
Nathaniel Dugos ◽  
Susan Roces ◽  
Arnel Beltran ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Gas Barrier ◽  
Membrane Performance ◽  
Membrane Characterization ◽  
Separation Membrane ◽  
Zeolite 5A ◽  
Ft Ir

Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature

Synthesis by plasma-enhanced chemical-vapor deposition and characterization of siliconlike films with hydrophobic functionalities for improved long-term geometric stability of fiber-reinforced polymers

2008 ◽  
Vol 23 (4) ◽  
pp. 1042-1050 ◽  
Author(s):  
A. Cremona ◽  
E. Vassallo ◽  
A. Merlo ◽  
A. Srikantha Phani ◽  
L. Laguardia
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Strength ◽  
Scratch Resistance ◽  
Fiber Reinforced Polymers ◽  
Fiber Reinforced ◽  
Water Contact ◽  
Fiber Failure

Amorphous siliconlike films with hydrophobic functionalities have been deposited by plasma-enhanced chemical-vapor deposition on carbon-fiber-reinforced polymer (CFRP) unidirectional laminates used for micromechanical applications where high strength-to-weight and high stiffness-to-weight ratios are required. To improve long-term geometrical stability in ultrahigh-precision machine structures, hydrophobic CFRP materials are desirable. Three layers have been grown with different plasma-process parameters from a mixture of hexamethyldisiloxane, O2, and Ar. Chemical composition, water contact angle, surface energy, morphology, and tribological properties have been evaluated to choose the one that best fulfills hydrophobicity, wear, and scratch resistance. Wear tests have also been carried out on CFRP laminates coated with a polyurethane layer to compare the wear performance of the above specimens with that of a conventional hydrophobic coating. Scanning electron microscope images show a very good adhesion of the films to the composite substrate because the failure of the film and of the substrate (such as fiber failure) take place simultaneously.

Low-kSiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor

2005 ◽  
Vol 44 (6A) ◽  
pp. 3879-3884 ◽  
Author(s):  
Yoshimi Shioya ◽  
Haruo Shimoda ◽  
Kazuo Maeda ◽  
Toshiyuki Ohdaira ◽  
Ryoichi Suzuki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Vapor Deposition ◽  
Chemical Vapor

scholarly journals High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Ren-Da Fu ◽  
Che Kai Chang ◽  
Ming-Yueh Chuang ◽  
Tai-Hong Chen ◽  
Shao-Kai Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Barrier Structure ◽  
Organic Light Emitting Diode

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.

Chemical vapor deposition of diamond films from water vapor rf‐plasma discharges

1992 ◽  
Vol 60 (3) ◽  
pp. 329-331 ◽  
Author(s):  
R. A. Rudder ◽  
G. C. Hudson ◽  
J. B. Posthill ◽  
R. E. Thomas ◽  
R. C. Hendry ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Discharges
Sign in / Sign up

Export Citation Format

Share Document