Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures

2014 ◽  
Vol 105 (2) ◽  
pp. 022102 ◽  
Author(s):  
S. V. Morozov ◽  
V. V. Rumyantsev ◽  
A. V. Antonov ◽  
A. M. Kadykov ◽  
K. V. Maremyanin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Narrow Gap ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Tunnel Injection

Time-resolved photoluminescence spectroscopy of GaAs quantum well tunneling structures

1990 ◽  
Vol 228 (1-3) ◽  
pp. 393-398 ◽  
Author(s):  
T.B. Norris ◽  
G.A. Mourou ◽  
X.J. Song ◽  
L.F. Eastman ◽  
N. Vodjdani ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

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