Photoexcitation Dynamics in Strongly Interacting Donor/Acceptor Blends Probed by Time-Resolved Photoluminescence Spectroscopy

2021 ◽  
Author(s):  
Nico Hofeditz ◽  
Marina Gerhard ◽  
Christoph P. Theurer ◽  
Julian Hausch ◽  
Katharina Broch ◽  
...  
Keyword(s):  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Strongly Interacting ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

1995 ◽  
Vol 378 ◽  
Author(s):  
B. K. Meyer ◽  
D. Volm ◽  
C. Wetzel ◽  
L. Eckey ◽  
J.-Ch. Holst ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Photoluminescence Spectroscopy ◽  
Epitaxial Layers ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Time Resolved Photoluminescence

AbstractFree and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

2009 ◽  
Vol 94 (18) ◽  
pp. 183101 ◽  
Author(s):  
C. H. Lin ◽  
H. S. Lin ◽  
C. C. Huang ◽  
S. K. Su ◽  
S. D. Lin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Spectroscopy ◽  
Quantum Ring ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Defect Characterization in ZnGeP2 by Time -Resolved Photoluminescence

1996 ◽  
Vol 450 ◽  
Author(s):  
N. Dietz ◽  
W. Busse ◽  
H. E. Gumlich ◽  
W. Ruderman ◽  
I. Tsveybak ◽  
...  
Keyword(s):  
Energy Range ◽  
Infrared Emission ◽  
Luminescence Spectra ◽  
Broad Emission Band ◽  
Wide Energy Range ◽  
Time Resolved ◽  
Broad Emission ◽  
Donor Acceptor ◽  
Donor States ◽  
Time Resolved Photoluminescence

AbstractSteady state and time-resolved photoluminescence (PL) investigations on ZnGeP2 crystals grown from the vapor phase by high pressure physical vapor transport (HPVT) and from the melt by gradient freezing (GF) are reported. The luminescence spectra reveal a broad infrared emission with peak position at 1.2 eV that exhibits features of classical donor-acceptor recombination. The hyperbolic decay characteristic over a wide energy range, investigated from 1.2 eV up to 1.5eV, suggest that this broad emission band is related to one energetic recombination center. Higher energetic luminescence structures at 1.6eV and 1.7eV were revealed after annealing of ZnGeP2 crystals in vacuum for a longer period of time. The emission decay behavior in this energy range is characterized by two hyperbolic time constants, viewed as the supercomposition of the decay from the broad emission center peaked at 1.2eV and additional donor-acceptor recombination emissions at 1.6eV and 1.7eV, respectively. ZnGeP2 crystals grown under Ge-deficient conditions by HPVT show an additional emission structure at 1.8 eV with sharp emission fine structures at 1.778 eV related to the presence of additional donor states.

New Data Analysis Method for Time-Resolved Infrared Photoluminescence Spectroscopy

2020 ◽  
pp. 000370282096970
Author(s):  
Kacper Grodecki ◽  
Krzysztof Murawski
Keyword(s):  
Data Analysis ◽  
Photoluminescence Spectrum ◽  
Streak Camera ◽  
Photoluminescence Spectroscopy ◽  
Analysis Method ◽  
Time Resolved ◽  
Time Constants ◽  
Data Treatment ◽  
Typical Time ◽  
Time Resolved Photoluminescence

In this article, a new data treatment based on time-resolved photoluminescence is presented. It works as a streak camera for infrared. A time-resolved photoluminescence spectrum for the HgCd0.33Te0.67 sample at 120 K was performed and analyzed. Typical time-resolved photoluminescence measurements, to compare our results with literature, were conducted. An interpretation of the behavior for three different time constants found in the signal is proposed.

Time-resolved photoluminescence in CdIn2S4

1987 ◽  
Vol 65 (3) ◽  
pp. 204-207 ◽  
Author(s):  
S. Charbonneau ◽  
E. Fortin ◽  
J. Beauvais
Keyword(s):  
Single Crystals ◽  
Free Electron ◽  
Continuous Wave ◽  
Time Window ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Spectral Bands ◽  
Window Technique ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

Photoluminescence spectra of CdIn2S4 single crystals at 1.8 K under both continuous-wave (CW) and pulsed excitation were obtained. In the latter case, a variable time-window technique was used to observe the time evolution of the spectra between 0 and 100 μs. In contrast to previous studies, four spectral bands were observed under both CW and pulsed, intrinsic or extrinsic excitation. In particular, two bands previously unobserved under extrinsic excitation were detected at 1.35 and 1.68 eV, and have been attributed to donor–acceptor pairs and free-electron to acceptor transitions respectively.

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