Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Tunnel Injection

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

2008 ◽  
Vol 19 (29) ◽  
pp. 295704 ◽  
Author(s):  
J Tatebayashi ◽  
B L Liang ◽  
R B Laghumavarapu ◽  
D A Bussian ◽  
H Htoon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Type Ii ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Ingaas Quantum Well

Improve Persistent Luminescence in Pressure-tuned CsPbBr3 Nanocrystals by Ce3+ Doping

2021 ◽  
Author(s):  
Bao Liu ◽  
Meng Tian ◽  
Yang Gao ◽  
Pengyu Zhou ◽  
Kailin Chi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Spectroscopy ◽  
Persistent Luminescence ◽  
Time Resolved ◽  
Novel Strategy ◽  
Time Resolved Photoluminescence ◽  
Kinetics Of

The pressure-dependent photoluminescence kinetics of CsPbBr3:Ce quantum dots was investigated by steady-state and time-resolved photoluminescence spectroscopy. Here, we propose a novel strategy to improve the persistent luminescence of CsPbBr3 quantum...

scholarly journals Фотолюминесценция с временным разрешением наноструктур InGaAs различной квантовой размерности

2019 ◽  
Vol 53 (11) ◽  
pp. 1520
Author(s):  
А.М. Надточий ◽  
С.А. Минтаиров ◽  
Н.А. Калюжный ◽  
М.В. Максимов ◽  
Д.А. Санников ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Photon ◽  
Photon Counting ◽  
Dimensional Structure ◽  
Time Resolved ◽  
Single Photon Counting ◽  
Gaas Substrates ◽  
Photoluminescence Lifetime ◽  
Time Resolved Photoluminescence

By using time-correlated single-photon counting time-resolved photoluminescence of quantum-sized heterostructures of different dimensionality was investigated. InGaAs quantum dots, quantum well, and transitionally-dimensional structure — quantum well-dots were grown on GaAs substrates. It was observed, that photoluminescence decay strongly depends on structure dimensionality resulting in decay value of 6,7, and more than 20 ns for quantum dots, well-dots and well, respectively. As we believe localization centers in heterostructures may be responsible for such shortening of photoluminescence lifetime.

Time-resolved photoluminescence spectroscopy of GaAs quantum well tunneling structures

1990 ◽  
Vol 228 (1-3) ◽  
pp. 393-398 ◽  
Author(s):  
T.B. Norris ◽  
G.A. Mourou ◽  
X.J. Song ◽  
L.F. Eastman ◽  
N. Vodjdani ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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