scholarly journals Effects of the Cu off-stoichiometry on transport properties of wide gap p-type semiconductor, layered oxysulfide LaCuSO

2014 ◽  
Vol 105 (2) ◽  
pp. 022104 ◽  
Author(s):  
Yosuke Goto ◽  
Mai Tanaki ◽  
Yuki Okusa ◽  
Taizo Shibuya ◽  
Kenji Yasuoka ◽  
...  
Keyword(s):  
Transport Properties ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

Synthesis, crystal structure and thermoelectric properties of a new metal telluride Ba3Ag3InTe6

2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Type Semiconductor ◽  
P Type

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.

Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism

2006 ◽  
Vol 100 (3) ◽  
pp. 033717 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Shuichi Ohno ◽  
Toshio Kamiya ◽  
Hidenori Hiramatsu ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Transport Properties ◽  
Carrier Transport ◽  
Type Semiconductor ◽  
P Type ◽  
Mn Doped ◽  
Carrier Transport Properties

Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe

2010 ◽  
Vol 132 (42) ◽  
pp. 15060-15067 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Toshio Kamiya ◽  
Tetsuya Tohei ◽  
Eiji Ikenaga ◽  
Teruyasu Mizoguchi ◽  
...  
Keyword(s):  
Optoelectronic Properties ◽  
Hole Doping ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

2007 ◽  
Vol 91 (1) ◽  
pp. 012104 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Maiko Kikuchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Heavy Hole ◽  
Hole Doping ◽  
Epitaxial Thin Films ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

scholarly journals Crystalline TQPP as p-type semiconductor: X-ray crystallographic investigation, OTFT device, and computational analysis of transport properties

2015 ◽  
Vol 1093 ◽  
pp. 144-149 ◽  
Author(s):  
Brigitte Wex ◽  
Ala’a O. El-Ballouli ◽  
Antoine Vanvooren ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Transport Properties ◽  
Computational Analysis ◽  
Crystallographic Investigation ◽  
X Ray ◽  
Type Semiconductor ◽  
P Type

Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuOS

2002 ◽  
Vol 747 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Optical Properties ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Electrical And Optical Properties ◽  
Type Semiconductor ◽  
Wide Gap ◽  
Spe Method ◽  
P Type

ABSTRACTEpitaxial films of LaCuOS, a wide gap p-type semiconductor, were grown on yittria- stabi-lized-zirconia (YSZ) (001) or MgO (001) substrates by a reactive solid phase epitaxy (R-SPE) method. Crystal quality, electrical and optical properties on the epitaxial films on each substrate are examined in this paper. Achievement of the heteroepitaxial growth of LaCuOS on the MgO (001) substrate improves optical properties of LaCuOS such as spectral bandwidths and emission intensity, suggesting that the MgO (001) substrate is more preferable than the YSZ (001) for epitaxial growth substrate for LaCuOS.

Tuning the π–π overlap and charge transport in single crystals of an organic semiconductor via solvation and polymorphism

2020 ◽  
Vol 22 (35) ◽  
pp. 19855-19863
Author(s):  
Marc Courté ◽  
Jun Ye ◽  
Hui Jiang ◽  
Rakesh Ganguly ◽  
Shasha Tang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Crystalline Form ◽  
Organic P ◽  
Single Crystalline ◽  
Type Semiconductor ◽  
P Type

We report here on the occurrence of two solvates and three polymorphs in single crystalline form of an organic p-type semiconductor and demonstrate here that solvation allows to tune the π–π overlap and transport properties of organic semiconductors.

Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS

2002 ◽  
Vol 81 (4) ◽  
pp. 598-600 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Heteroepitaxial Growth ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type
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