Synthesis, crystal structure and thermoelectric properties of a new metal telluride Ba3Ag3InTe6

2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Type Semiconductor ◽  
P Type

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

scholarly journals Study of anisotropic thermal conductivity in textured thermoelectric alloys by Raman spectroscopy

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thermal Transport ◽  
Layered Crystal ◽  
Layered Crystal Structure ◽  
Thermal Transport Properties ◽  
Anisotropic Thermal Conductivity ◽  
P Type

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.

scholarly journals Outstanding thermoelectric properties of solvothermal-synthesized Sn1−3xInxAg2xTe micro-crystals through defect engineering and band tuning

2020 ◽  
Vol 8 (7) ◽  
pp. 3978-3987 ◽  
Author(s):  
Raza Moshwan ◽  
Wei-Di Liu ◽  
Xiao-Lei Shi ◽  
Qiang Sun ◽  
Han Gao ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Transport Properties ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Electrical Transport ◽  
Energy Levels ◽  
Resonance Energy ◽  
Defect Engineering ◽  
Electrical Transport Properties ◽  
Co Doping

In eco-friendly SnTe thermoelectrics, In and Ag co-doping induces the synergistic effect of resonance energy levels and valence band convergence to enhance its electrical transport properties, while defects ameliorates its thermal transport.

scholarly journals Влияние легирования ванадием на термоэлектрические свойства сплавов Гейслера Fe-=SUB=-2-=/SUB=-Ti-=SUB=-1-x-=/SUB=-V-=SUB=-x-=/SUB=-Sn

2019 ◽  
Vol 53 (6) ◽  
pp. 777
Author(s):  
А.И. Таранова ◽  
А.П. Новицкий ◽  
А.И. Воронин ◽  
С.В. Таскаев ◽  
В.В. Ховайло
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Experimental Study ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Pristine Sample ◽  
Electrical Conductivity Behavior ◽  
P Type ◽  
Conductivity Behavior

In this work the results of an experimental study of Fe2Ti1-xVxSn alloys (x = 0; 0.06; 0.15; 0.2) are presented. According to the temperature dependencies of the electrical conductivity, Seebeck coefficient and thermal conductivity, it is established, that the studied compositions exhibit transport properties typical for semiconductors. The substitution of V at the Ti site leads to a change of the p-type electrical conductivity behavior to n-type; the pristine sample of Fe2TiSn has the best thermoelectric properties.

scholarly journals A Metastable p-Type Semiconductor as a Defect-Tolerant Photoelectrode

Molecules ◽  
2021 ◽  
Vol 26 (22) ◽  
pp. 6830
Author(s):  
Zahirul Sohag ◽  
Shaun O’Donnell ◽  
Lindsay Fuoco ◽  
Paul A. Maggard
Keyword(s):  
Valence Band ◽  
Crystalline Structure ◽  
Surface Oxidation ◽  
Defect Tolerance ◽  
Defect States ◽  
Powder Density ◽  
Type Semiconductor ◽  
Recombination Centers ◽  
Gap States ◽  
P Type

A p-type Cu3Ta7O19 semiconductor was synthesized using a CuCl flux-based approach and investigated for its crystalline structure and photoelectrochemical properties. The semiconductor was found to be metastable, i.e., thermodynamically unstable, and to slowly oxidize at its surfaces upon heating in air, yielding CuO as nano-sized islands. However, the bulk crystalline structure was maintained, with up to 50% Cu(I)-vacancies and a concomitant oxidation of the Cu(I) to Cu(II) cations within the structure. Thermogravimetric and magnetic susceptibility measurements showed the formation of increasing amounts of Cu(II) cations, according to the following reaction: Cu3Ta7O19 + x/2 O2 → Cu(3−x)Ta7O19 + x CuO (surface) (x = 0 to ~0.8). With minor amounts of surface oxidation, the cathodic photocurrents of the polycrystalline films increase significantly, from <0.1 mA cm−2 up to >0.5 mA cm−2, under visible-light irradiation (pH = 6.3; irradiant powder density of ~500 mW cm−2) at an applied bias of −0.6 V vs. SCE. Electronic structure calculations revealed that its defect tolerance arises from the antibonding nature of its valence band edge, with the formation of defect states in resonance with the valence band, rather than as mid-gap states that function as recombination centers. Thus, the metastable Cu(I)-containing semiconductor was demonstrated to possess a high defect tolerance, which facilitates its high cathodic photocurrents.

Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism

2006 ◽  
Vol 100 (3) ◽  
pp. 033717 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Shuichi Ohno ◽  
Toshio Kamiya ◽  
Hidenori Hiramatsu ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Transport Properties ◽  
Carrier Transport ◽  
Type Semiconductor ◽  
P Type ◽  
Mn Doped ◽  
Carrier Transport Properties

The first-principle study of the electronic, optical and thermoelectric properties of XTiO3 (X = Ca, Sr and Ba) compounds

2016 ◽  
Vol 30 (20) ◽  
pp. 1650141 ◽  
Author(s):  
A. A. Mubarak
Keyword(s):  
Band Structure ◽  
Thermoelectric Properties ◽  
Optical Parameters ◽  
Lattice Constants ◽  
Energy Bandgap ◽  
Band Structure Calculations ◽  
Type Semiconductor ◽  
Oxide Perovskite ◽  
P Type ◽  
Structure Calculations

The FP-LAPW method is utilized to investigate the elastic, optoelectronic and thermoelectric properties of [Formula: see text] [Formula: see text] and [Formula: see text] within the GGA. The calculated lattice constants and bulk modulus are found in agreement with previous studies. The present oxide–perovskite compounds are characterized as elastically stable and anisotropic. [Formula: see text] and [Formula: see text] are categorized as ductile compounds, whereas the [Formula: see text] compound is in the critical region between ductile and brittle. The DOS and the band structure calculations reveal indirect [Formula: see text]–[Formula: see text] energy bandgap for the present compounds. The hydrostatic pressure increases the energy bandgap and the width of the valence band. The character of the band structure does not change due to this pressure. The optical parameters are calculated in different radiation regions. Beneficial optics applications are predicted as revealed from the optical spectra. The transport properties are applied as a function of the variable temperatures or carrier concentration. It is found that the compounds under study are classified as a p-type semiconductor. The majority charge carriers responsible for conduction in these calculated compounds are holes rather than electrons.

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