Electronic Band Structure and New Magneto-transport Properties in p-type Semiconductor Medium-infrared HgTe / CdTe Superlattice

2005 ◽  
Author(s):  
Ab. Nafidi
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Type Semiconductor ◽  
P Type

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

scholarly journals Electronic Band Structure and Transport Properties of the Cluster Compound Ag3Tl2Mo15Se19

2019 ◽  
Vol 58 (9) ◽  
pp. 5533-5542 ◽  
Author(s):  
Patrick Gougeon ◽  
Philippe Gall ◽  
Rabih Al Rahal Al Orabi ◽  
Benoit Boucher ◽  
Bruno Fontaine ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Cluster Compound ◽  
Electronic Band

scholarly journals Electronic stripes and transport properties in borophene heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (38) ◽  
pp. 17894-17903 ◽  
Author(s):  
G. H. Silvestre ◽  
Wanderlã L. Scopel ◽  
R. H. Miwa
Keyword(s):  
Band Structure ◽  
Fermi Level ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Electronic States ◽  
Electronic Band

(Left) Localization of the electronic states near the Fermi level, and the electronic band structure projected on the S1 and S2 stripes. (Right) Transmission probabilites parallel (y) and perpendicular (x) to the S1/S2 borophene superlattice.

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

Remarkable electronic band structure leads to high thermoelectric properties in p-type γ-Cu2S

Vacuum ◽  
2019 ◽  
Vol 170 ◽  
pp. 108964
Author(s):  
Yangfan Cui ◽  
Shuai Duan ◽  
Xin Chen ◽  
Xiaobing Liu
Keyword(s):  
Band Structure ◽  
Thermoelectric Properties ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
P Type

Electronic band structure and low-temperature transport properties of the type-I clathrate Ba8NixGe46−x−y□y

2015 ◽  
Vol 44 (16) ◽  
pp. 7524-7537 ◽  
Author(s):  
U. Aydemir ◽  
C. Candolfi ◽  
A. Ormeci ◽  
M. Baitinger ◽  
U. Burkhardt ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Structure ◽  
Transport Properties ◽  
Homogeneity Range ◽  
Electronic Band Structure ◽  
Type I ◽  
Electronic Band ◽  
Comprehensive Study

This work reports a comprehensive study of the low-temperature transport properties of the type-I clathrates Ba8NixGe46−x−y□y in the homogeneity range (0 ≤ x ≤ 4.1).

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