Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe

2010 ◽  
Vol 132 (42) ◽  
pp. 15060-15067 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Toshio Kamiya ◽  
Tetsuya Tohei ◽  
Eiji Ikenaga ◽  
Teruyasu Mizoguchi ◽  
...  
Keyword(s):  
Optoelectronic Properties ◽  
Hole Doping ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

2007 ◽  
Vol 91 (1) ◽  
pp. 012104 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Maiko Kikuchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Heavy Hole ◽  
Hole Doping ◽  
Epitaxial Thin Films ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

scholarly journals Effects of the Cu off-stoichiometry on transport properties of wide gap p-type semiconductor, layered oxysulfide LaCuSO

2014 ◽  
Vol 105 (2) ◽  
pp. 022104 ◽  
Author(s):  
Yosuke Goto ◽  
Mai Tanaki ◽  
Yuki Okusa ◽  
Taizo Shibuya ◽  
Kenji Yasuoka ◽  
...  
Keyword(s):  
Transport Properties ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

Optoelectronic properties of transparent p-type semiconductor CuxS thin films

2010 ◽  
Vol 207 (7) ◽  
pp. 1652-1654 ◽  
Author(s):  
P. Parreira ◽  
G. Lavareda ◽  
J. Valente ◽  
F.T. Nunes ◽  
A. Amaral ◽  
...  
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Type Semiconductor ◽  
P Type

Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuOS

2002 ◽  
Vol 747 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Optical Properties ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Electrical And Optical Properties ◽  
Type Semiconductor ◽  
Wide Gap ◽  
Spe Method ◽  
P Type

ABSTRACTEpitaxial films of LaCuOS, a wide gap p-type semiconductor, were grown on yittria- stabi-lized-zirconia (YSZ) (001) or MgO (001) substrates by a reactive solid phase epitaxy (R-SPE) method. Crystal quality, electrical and optical properties on the epitaxial films on each substrate are examined in this paper. Achievement of the heteroepitaxial growth of LaCuOS on the MgO (001) substrate improves optical properties of LaCuOS such as spectral bandwidths and emission intensity, suggesting that the MgO (001) substrate is more preferable than the YSZ (001) for epitaxial growth substrate for LaCuOS.

Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS

2002 ◽  
Vol 81 (4) ◽  
pp. 598-600 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Heteroepitaxial Growth ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

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