A Silicon - Metal Contact Resistance

Nature ◽  
1947 ◽  
Vol 160 (4073) ◽  
pp. 710-711 ◽  
Author(s):  
E. H. PUTLEY
Keyword(s):  
Contact Resistance ◽  
Metal Contact

Contact resistance improvement by dielectric breakdown in semiconductor-dielectric-metal contact

2013 ◽  
Vol 102 (11) ◽  
pp. 113505 ◽  
Author(s):  
Kausik Majumdar ◽  
Chris Hobbs ◽  
Ken Matthews ◽  
Chien-Hao Chen ◽  
Tat Ngai ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Dielectric Breakdown ◽  
Metal Contact ◽  
Resistance Improvement

Development of an Experimental Procedure for Thermal Contact Resistance Estimation at the Glass/Metal Contact Interface

2013 ◽  
Vol 6 (2) ◽  
Author(s):  
B. Abdulhay ◽  
B. Bourouga ◽  
F. Alzetto ◽  
C. Challita
Keyword(s):  
Heat Flux ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Thermal Conditions ◽  
Metal Contact ◽  
Contact Interface ◽  
Equivalent Thermal Conductivity ◽  
Experimental Procedure ◽  
Glass Metal

In this paper, an experimental device is designed and developed in order to estimate thermal conditions at the glass/metal contact interface. This device is made of two parts: The upper part contains the tool (piston) made of bronze and a heating device to raise the temperature of the piston to 700 °C. The lower part is composed of a lead crucible and a glass sample. The assembly is provided with a heating system, an induction furnace of 6 kW for heating the glass up to 950 °C. The developed experimental procedure has permitted the estimation of the thermal contact resistance (TCR) using a developed measurement principle based on the inverse technique developed by Beck et al. (1985, Inverse Heat Conduction: III Posed Problems, Wiley Inter-science, New York). The semitransparent character of the glass has been taken into account by an additional radiative heat flux and an equivalent thermal conductivity. After the set-up tests, reproducibility experiments for a specific contact pressure have been carried out. Results show a good repeatability of the registered and estimated parameters such as the piston surface temperature, heat flux density, and TCR. The estimated value of TCR reaches 2 × 10−3 K m2/W with a maximum dispersion that does not exceed 6%.

Improvement of graphene–metal contact resistance by introducing edge contacts at graphene under metal

2014 ◽  
Vol 104 (18) ◽  
pp. 183506 ◽  
Author(s):  
Seung Min Song ◽  
Taek Yong Kim ◽  
One Jae Sul ◽  
Woo Cheol Shin ◽  
Byung Jin Cho
Keyword(s):  
Contact Resistance ◽  
Metal Contact

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer

2007 ◽  
Vol 17 (01) ◽  
pp. 85-89 ◽  
Author(s):  
Yunju Sun ◽  
Lester F. Eastman
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistor ◽  
Metal Contact ◽  
High Electron ◽  
Transfer Resistance ◽  
High Electron Mobility ◽  
Hemt Structure ◽  
Gan Hemts

A significant improvement of contact transfer resistance on undoped GaN/AlGaN/AlN (10 Å)/ GaN high electron mobility transistor (HEMT) structure was demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme compared to a Ti/Al/Mo/Au metallization scheme. A contact resistance as low as 0.16 ± 0.03 ohm - mm was achieved by rapid thermal annealing of evaporated Ta (125 Å)/ Ti (150 Å)/ Al (900 Å)/ Mo (400 Å)/ Au (500 Å) metal contact at 700 °C for 1 min followed by 800 °C for 30 sec in a N 2 ambient. An excellent edge acuity was also demonstrated for the annealed Ta/Ti/Al/Mo/Au ohmic contacts.

Reduction of metal contact resistance of graphene devices via CO2 cluster cleaning

2014 ◽  
Vol 104 (22) ◽  
pp. 223110 ◽  
Author(s):  
Sarang Gahng ◽  
Chang Ho Ra ◽  
Yu Jin Cho ◽  
Jang Ah Kim ◽  
Taesung Kim ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Metal Contact ◽  
Graphene Devices

scholarly journals Improvement in Strain Sensor Stability by Adapting the Metal Contact Layer

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 630
Author(s):  
Ji-Yeon Choy ◽  
Eun-Bee Jo ◽  
Chang-Joo Yim ◽  
Hae-Kyung Youi ◽  
Jung-Hoon Hwang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Contact Layer ◽  
Strain Sensors ◽  
Metal Contact ◽  
Sensor Performance ◽  
Semiconductor Junction ◽  
P Type ◽  
Structural Methods ◽  
Lower Contact

Research on stretchable strain sensors is actively conducted due to increasing interest in wearable devices. However, typical studies have focused on improving the elasticity of the electrode. Therefore, methods of directly connecting wire or attaching conductive tape to materials to detect deformation have been used to evaluate the performance of strain sensors. Polyaniline (PANI), a p-type semiconductive polymer, has been widely used for stretchable electrodes. However, conventional procedures have limitations in determining an appropriate metal for ohmic contact with PANI. Materials that are generally used for connection with PANI form an undesirable metal-semiconductor junction and have significant contact resistance. Hence, they degrade sensor performance. This study secured ohmic contact by adapting Au thin film as the metal contact layer (the MCL), with lower contact resistance and a larger work function than PANI. Additionally, we presented a buffer layer using hard polydimethylsiloxane (PDMS) and structured it into a dumbbell shape to protect the metal from deformation. As a result, we enhanced steadiness and repeatability up to 50% strain by comparing the gauge factors and the relative resistance changes. Consequently, adapting structural methods (the MCL and the dumbbell shape) to a device can result in strain sensors with promising stability, as well as high stretchability.

Enhancing graphene–metal contact using graphene square flake array sandwich structure

RSC Advances ◽  
2016 ◽  
Vol 6 (52) ◽  
pp. 46244-46248 ◽  
Author(s):  
Shixi Guo ◽  
Xin Li ◽  
Hui Song ◽  
Ping Cui ◽  
Quanfu Li ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Sandwich Structure ◽  
Contact Structure ◽  
Metal Contact ◽  
First Time

A novel graphene–metal contact structure that has an extra layer of graphene square flake (GSF) array sandwiched between the graphene channel and the metal to reduce contact resistance is designed for the first time.

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