Contact resistance improvement by dielectric breakdown in semiconductor-dielectric-metal contact

2013 ◽  
Vol 102 (11) ◽  
pp. 113505 ◽  
Author(s):  
Kausik Majumdar ◽  
Chris Hobbs ◽  
Ken Matthews ◽  
Chien-Hao Chen ◽  
Tat Ngai ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Dielectric Breakdown ◽  
Metal Contact ◽  
Resistance Improvement

Development of an Experimental Procedure for Thermal Contact Resistance Estimation at the Glass/Metal Contact Interface

2013 ◽  
Vol 6 (2) ◽  
Author(s):  
B. Abdulhay ◽  
B. Bourouga ◽  
F. Alzetto ◽  
C. Challita
Keyword(s):  
Heat Flux ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Thermal Conditions ◽  
Metal Contact ◽  
Contact Interface ◽  
Equivalent Thermal Conductivity ◽  
Experimental Procedure ◽  
Glass Metal

In this paper, an experimental device is designed and developed in order to estimate thermal conditions at the glass/metal contact interface. This device is made of two parts: The upper part contains the tool (piston) made of bronze and a heating device to raise the temperature of the piston to 700 °C. The lower part is composed of a lead crucible and a glass sample. The assembly is provided with a heating system, an induction furnace of 6 kW for heating the glass up to 950 °C. The developed experimental procedure has permitted the estimation of the thermal contact resistance (TCR) using a developed measurement principle based on the inverse technique developed by Beck et al. (1985, Inverse Heat Conduction: III Posed Problems, Wiley Inter-science, New York). The semitransparent character of the glass has been taken into account by an additional radiative heat flux and an equivalent thermal conductivity. After the set-up tests, reproducibility experiments for a specific contact pressure have been carried out. Results show a good repeatability of the registered and estimated parameters such as the piston surface temperature, heat flux density, and TCR. The estimated value of TCR reaches 2 × 10−3 K m2/W with a maximum dispersion that does not exceed 6%.

Improvement of graphene–metal contact resistance by introducing edge contacts at graphene under metal

2014 ◽  
Vol 104 (18) ◽  
pp. 183506 ◽  
Author(s):  
Seung Min Song ◽  
Taek Yong Kim ◽  
One Jae Sul ◽  
Woo Cheol Shin ◽  
Byung Jin Cho
Keyword(s):  
Contact Resistance ◽  
Metal Contact

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer

2007 ◽  
Vol 17 (01) ◽  
pp. 85-89 ◽  
Author(s):  
Yunju Sun ◽  
Lester F. Eastman
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistor ◽  
Metal Contact ◽  
High Electron ◽  
Transfer Resistance ◽  
High Electron Mobility ◽  
Hemt Structure ◽  
Gan Hemts

A significant improvement of contact transfer resistance on undoped GaN/AlGaN/AlN (10 Å)/ GaN high electron mobility transistor (HEMT) structure was demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme compared to a Ti/Al/Mo/Au metallization scheme. A contact resistance as low as 0.16 ± 0.03 ohm - mm was achieved by rapid thermal annealing of evaporated Ta (125 Å)/ Ti (150 Å)/ Al (900 Å)/ Mo (400 Å)/ Au (500 Å) metal contact at 700 °C for 1 min followed by 800 °C for 30 sec in a N 2 ambient. An excellent edge acuity was also demonstrated for the annealed Ta/Ti/Al/Mo/Au ohmic contacts.

A Silicon - Metal Contact Resistance

Nature ◽  
1947 ◽  
Vol 160 (4073) ◽  
pp. 710-711 ◽  
Author(s):  
E. H. PUTLEY
Keyword(s):  
Contact Resistance ◽  
Metal Contact

p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing

2019 ◽  
Vol 40 (2) ◽  
pp. 307-309 ◽  
Author(s):  
C. I. Li ◽  
N. Breil ◽  
T. Y. Wen ◽  
S. Y. Liu ◽  
M. S. Hsieh ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Laser Annealing ◽  
Nanosecond Laser ◽  
Plasma Doping ◽  
P Type ◽  
Resistance Improvement

Reduction of metal contact resistance of graphene devices via CO2 cluster cleaning

2014 ◽  
Vol 104 (22) ◽  
pp. 223110 ◽  
Author(s):  
Sarang Gahng ◽  
Chang Ho Ra ◽  
Yu Jin Cho ◽  
Jang Ah Kim ◽  
Taesung Kim ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Metal Contact ◽  
Graphene Devices
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