Response to “Comment on ‘A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb type-II superlattices’” [J. Appl. Phys. 115, 146101 (2014)]

2014 ◽  
Vol 115 (14) ◽  
pp. 146102
Author(s):  
S. Safa ◽  
A. Asgari ◽  
L. Faraone
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Interface Roughness ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Interface Roughness Scattering

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650384
Author(s):  
S. Safa ◽  
A. Asgari
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Structural Parameters ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Interface Roughness Scattering ◽  
Different Temperatures ◽  
Scattering Rates

The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices (SLs) at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such SLs are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have been obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer SLs and the mobility rises as the temperature increases in low-temperature regime.

Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

2007 ◽  
Vol 102 (11) ◽  
pp. 113710 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Type Ii ◽  
Interface Roughness Scattering ◽  
Broken Gap

Interface roughness scattering-limited electron mobility in AlAs/GaAs and Ga0.5In0.5P/GaAs wells

1999 ◽  
Vol 86 (1) ◽  
pp. 459-463 ◽  
Author(s):  
B. R. Nag ◽  
Sanghamitra Mukhopadhyay ◽  
Madhumita Das
Keyword(s):  
Electron Mobility ◽  
Interface Roughness ◽  
Interface Roughness Scattering

InAs∕GaSb Type II Superlattices as Low-Temperature Thermoelectrics

2011 ◽  
Author(s):  
C. Zhou ◽  
S. Birner ◽  
M. Norko ◽  
Y. Tang ◽  
M. Grayson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Type Ii ◽  
Type Ii Superlattices

Interface roughness scattering in type II band offset GaInAsSb/InAs single heterostructures

2007 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Band Offset ◽  
Type Ii ◽  
Interface Roughness Scattering
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