Interface roughness scattering and electron mobility in quantum wires

1992 ◽  
Vol 60 (11) ◽  
pp. 1315-1317 ◽  
Author(s):  
J. Motohisa ◽  
H. Sakaki
Keyword(s):  
Electron Mobility ◽  
Quantum Wires ◽  
Interface Roughness ◽  
Interface Roughness Scattering

Interface roughness scattering-limited electron mobility in AlAs/GaAs and Ga0.5In0.5P/GaAs wells

1999 ◽  
Vol 86 (1) ◽  
pp. 459-463 ◽  
Author(s):  
B. R. Nag ◽  
Sanghamitra Mukhopadhyay ◽  
Madhumita Das
Keyword(s):  
Electron Mobility ◽  
Interface Roughness ◽  
Interface Roughness Scattering

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650384
Author(s):  
S. Safa ◽  
A. Asgari
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Structural Parameters ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Interface Roughness Scattering ◽  
Different Temperatures ◽  
Scattering Rates

The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices (SLs) at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such SLs are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have been obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer SLs and the mobility rises as the temperature increases in low-temperature regime.

Interface roughness scattering in laterally coupled InGaAs quantum wires

2010 ◽  
Vol 97 (26) ◽  
pp. 262103 ◽  
Author(s):  
Vas. P. Kunets ◽  
M. D. Teodoro ◽  
V. G. Dorogan ◽  
P. M. Lytvyn ◽  
G. G. Tarasov ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Interface Roughness ◽  
Interface Roughness Scattering

Electron mobility limited by surface and interface roughness scattering in AlxGa1−xN/GaN quantum wells

2013 ◽  
Vol 22 (7) ◽  
pp. 077305 ◽  
Author(s):  
Jian-Xia Wang ◽  
Shao-Yan Yang ◽  
Jun Wang ◽  
Gui-Peng Liu ◽  
Zhi-Wei Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Interface Roughness ◽  
Surface And Interface ◽  
Interface Roughness Scattering
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