Interface roughness scattering in type II band offset GaInAsSb/InAs single heterostructures

2007 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Band Offset ◽  
Type Ii ◽  
Interface Roughness Scattering

Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

2007 ◽  
Vol 102 (11) ◽  
pp. 113710 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Type Ii ◽  
Interface Roughness Scattering ◽  
Broken Gap

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650384
Author(s):  
S. Safa ◽  
A. Asgari
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Structural Parameters ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Interface Roughness Scattering ◽  
Different Temperatures ◽  
Scattering Rates

The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices (SLs) at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such SLs are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have been obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer SLs and the mobility rises as the temperature increases in low-temperature regime.

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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