Temperature‐dependent electron mobility in GaN: Effects of space charge and interface roughness scattering

1994 ◽  
Vol 64 (2) ◽  
pp. 223-225 ◽  
Author(s):  
R. P. Joshi
1999 ◽  
Vol 86 (1) ◽  
pp. 459-463 ◽  
Author(s):  
B. R. Nag ◽  
Sanghamitra Mukhopadhyay ◽  
Madhumita Das

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650384
Author(s):  
S. Safa ◽  
A. Asgari

The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices (SLs) at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such SLs are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have been obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer SLs and the mobility rises as the temperature increases in low-temperature regime.


2013 ◽  
Vol 22 (7) ◽  
pp. 077305 ◽  
Author(s):  
Jian-Xia Wang ◽  
Shao-Yan Yang ◽  
Jun Wang ◽  
Gui-Peng Liu ◽  
Zhi-Wei Li ◽  
...  

1965 ◽  
Vol 36 (1) ◽  
pp. 168-175 ◽  
Author(s):  
A. Waxman ◽  
V. E. Henrich ◽  
F. V. Shallcross ◽  
H. Borkan ◽  
P. K. Weimer

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