Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

2014 ◽  
Vol 104 (13) ◽  
pp. 133506 ◽  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diodes ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Barrier Inhomogeneity

Effect of Ag/Au bilayer assisted etching on the strongly enhanced photoluminescence and visible light photocatalysis by Si nanowire arrays

2016 ◽  
Vol 18 (11) ◽  
pp. 7715-7727 ◽  
Author(s):  
Ramesh Ghosh ◽  
Kenji Imakita ◽  
Minoru Fujii ◽  
P. K. Giri
Keyword(s):  
Visible Light ◽  
Schottky Barrier ◽  
Nanowire Arrays ◽  
Visible Light Photocatalysis ◽  
Barrier Effect ◽  
Si Nanowires ◽  
Si Nanowire ◽  
Enhanced Photoluminescence ◽  
Plasmon Enhancement

Array of Si nanowires fabricated by Au/Ag bilayer metal assisted etching exhibit strongly enhanced photoluminescence and efficient visible light photocatalysis and are primarily attributed to plasmon enhancement and Schottky barrier effect, respectively.

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

scholarly journals DRIE Si Nanowire Arrays Supported Nano-Carbon Film for Deriving High Specific Energy Supercapacitors On-Chip

2021 ◽  
Vol 1837 (1) ◽  
pp. 012005
Author(s):  
Pai Lu ◽  
Xuyuan Chen ◽  
Per Ohlckers ◽  
Einar Halvorsen ◽  
Martin Hoffmann ◽  
...  
Keyword(s):  
Specific Energy ◽  
Carbon Film ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Nano Carbon ◽  
High Specific Energy ◽  
On Chip

Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Electrical Properties ◽  
Chemical Modification ◽  
Nanowire Array ◽  
Noise Measurement ◽  
Nanowire Arrays ◽  
Interface Traps ◽  
Si Nanowire ◽  
Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

Improvement in Schottky barrier in-homogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

2021 ◽  
Author(s):  
Ajay Kumar Visvkarma ◽  
Chandan Sharma ◽  
Chanchal Saraswat ◽  
D S Rawal ◽  
Seema Vinayak ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diodes ◽  
Γ Ray

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

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