Effect of Ag/Au bilayer assisted etching on the strongly enhanced photoluminescence and visible light photocatalysis by Si nanowire arrays

2016 ◽  
Vol 18 (11) ◽  
pp. 7715-7727 ◽  
Author(s):  
Ramesh Ghosh ◽  
Kenji Imakita ◽  
Minoru Fujii ◽  
P. K. Giri
Keyword(s):  
Visible Light ◽  
Schottky Barrier ◽  
Nanowire Arrays ◽  
Visible Light Photocatalysis ◽  
Barrier Effect ◽  
Si Nanowires ◽  
Si Nanowire ◽  
Enhanced Photoluminescence ◽  
Plasmon Enhancement

Array of Si nanowires fabricated by Au/Ag bilayer metal assisted etching exhibit strongly enhanced photoluminescence and efficient visible light photocatalysis and are primarily attributed to plasmon enhancement and Schottky barrier effect, respectively.

Efficient visible light photocatalysis and tunable photoluminescence from orientation controlled mesoporous Si nanowires

RSC Advances ◽  
2016 ◽  
Vol 6 (42) ◽  
pp. 35365-35377 ◽  
Author(s):  
Ramesh Ghosh ◽  
P. K. Giri
Keyword(s):  
Visible Light ◽  
Chemical Etching ◽  
Visible Light Photocatalysis ◽  
Si Nanowires ◽  
Visible Photoluminescence

Efficient visible light photocatalysis and visible photoluminescence from orientation controlled mesoporous Si nanowires grown by Ag assisted chemical etching of Si have been discussed.

Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 2787-2792 ◽  
Author(s):  
Ruijin Hu ◽  
Haiguang Ma ◽  
Han Yin ◽  
Jun Xu ◽  
Kunji Chen ◽  
...  
Keyword(s):  
Self Assembly ◽  
High Performance ◽  
Nanowire Arrays ◽  
Si Nanowires ◽  
3D Integration ◽  
Si Nanowire

3D integration of stacked Si nanowire arrays via a self assembly growth on Bosch-etched sidewalls and a successful demonstration of high performance staked channel transistors with an impressive on/off current >107.

Si nanowire directly grown on a liquid metal substrate—towards wafer scale transferable nanowire arrays with improved visible-light sterilization

2014 ◽  
Vol 25 (14) ◽  
pp. 145601 ◽  
Author(s):  
Hui Wang ◽  
Jian-Tao Wang ◽  
Xue-Mei Ou ◽  
Chun-Sing Lee ◽  
Xiao-Hong Zhang
Keyword(s):  
Liquid Metal ◽  
Visible Light ◽  
Metal Substrate ◽  
Nanowire Arrays ◽  
Wafer Scale ◽  
Si Nanowire

Catalyst-free synthesis and cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones

2008 ◽  
Vol 23 (12) ◽  
pp. 3403-3408 ◽  
Author(s):  
Kwang-Soo Son ◽  
Dong Hyun Lee ◽  
Jae-Woong Choung ◽  
Yong Bum Pyun ◽  
Won Il Park ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Si Nanowires ◽  
Si Nanowire ◽  
Catalyst Free ◽  
Transmission Electron ◽  
Nanowire Networks

We report the catalyst-free synthesis of ZnO nanobranches on Si nanowires using metalorganic chemical vapor deposition. The formation of single-crystalline ZnO nanobranches on Si nanowire backbones has been confirmed by lattice resolved transmission electron microscopy. Depending on the growth parameters, especially the growth temperature, the morphology and size of the ZnO nanobranches evolved from nanothorn-shaped (at 350 °C) to nanoneedle-shaped structures (at 500 °C). When the growth temperature was further increased to 800 °C, thin ZnO nanowire branches grew out of the Si nanowire backbones coated with thin ZnO shells, whereas no ZnO branch was formed on bare Si nanowires due to limited nucleation. The growth behavior was further exploited to fabricate ZnO/Si nanowire networks by growing the ZnO nanowires selectively on laterally aligned Si–ZnO core-shell nanowire arrays. In addition, cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones are discussed with respect to position and size.

Study of Two-Step Electroless Etched Si Nanowire Arrays

2011 ◽  
Vol 110-116 ◽  
pp. 3284-3288 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Properties ◽  
Chemical Etching ◽  
Nanowire Arrays ◽  
Nucleation Process ◽  
Si Nanowires ◽  
Two Stage ◽  
Si Nanowire ◽  
Ag Particles

The influence of the nucleation process of Ag particles on the formation of Si nanowire arrays is investigated by two-stage electroless chemical etching. The dimensions of the Ag particles formed in the first stage of the process play an important role in the formation of the Si nanowires. The nucleation and etch result are analysed using SEM. The electrical properties of the resulting Si NW arrays are also studied.

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

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