Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

2014 ◽  
Vol 311 ◽  
pp. 224-229 ◽  
Author(s):  
Yow-Jon Lin ◽  
Jian-Huang Lin
Keyword(s):  
Schottky Barrier ◽  
Schottky Diodes ◽  
Annealing Effect ◽  
Barrier Inhomogeneity

Improvement in Schottky barrier in-homogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

2021 ◽  
Author(s):  
Ajay Kumar Visvkarma ◽  
Chandan Sharma ◽  
Chanchal Saraswat ◽  
D S Rawal ◽  
Seema Vinayak ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diodes ◽  
Γ Ray

Bias Annealing Effect on Hydrogen-Containing Au/N-Silicon Schottky Barrier

1993 ◽  
Vol 319 ◽  
Author(s):  
M.H. Yuan ◽  
Y.Q. Jia ◽  
G.G. Qin
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Annealing Temperature ◽  
Interface States ◽  
Annealing Effect ◽  
Reversible Change ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Hydrogen Incorporation

AbstractAu/n-Si Schottky barrier (SB) incorporated by hydrogen has a 0.13 eV lower SB height (SBH) than that without hydrogen incorporation. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. Besides, the ZBA and RBA cycling experiments reveal a reversible change of the SBH with in at least three cycles. The higher annealing temperature of RBA results in higher SBH. We interpret the above experimental facts as that hydrogen has an effect on metal-semiconductor interface states and then on the SBH, and both the bias on SB and temperature of annealing can influence the hydrogen effects on metal-semiconductor interface states.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

scholarly journals Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation

2019 ◽  
Vol 5 (10) ◽  
pp. eaax5733 ◽  
Author(s):  
T. Harada ◽  
S. Ito ◽  
A. Tsukazaki
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Oxide Interface ◽  
Electric Dipoles ◽  
Bandgap Semiconductors ◽  
High Temperature Operation

High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

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