Split-illumination electron holography for improved evaluation of electrostatic potential associated with electrophotography

2014 ◽  
Vol 104 (13) ◽  
pp. 131601 ◽  
Author(s):  
Toshiaki Tanigaki ◽  
Kuniaki Sato ◽  
Zentaro Akase ◽  
Shinji Aizawa ◽  
Hyun Soon Park ◽  
...  
2007 ◽  
Vol 90 (3) ◽  
pp. 032101 ◽  
Author(s):  
Z. H. Wu ◽  
M. Stevens ◽  
F. A. Ponce ◽  
W. Lee ◽  
J. H. Ryou ◽  
...  

Microscopy ◽  
2011 ◽  
Vol 61 (2) ◽  
pp. 77-84 ◽  
Author(s):  
Toshiaki Tanigaki ◽  
Shinji Aizawa ◽  
Takahiro Suzuki ◽  
Akira Tonomura

2015 ◽  
Vol 21 (S3) ◽  
pp. 1969-1970
Author(s):  
Toshiaki Tanigaki ◽  
Zentaro Akase ◽  
Shinji Aizawa ◽  
Hyun Soon Park ◽  
Yasukazu Murakami ◽  
...  

2005 ◽  
Vol 87 (16) ◽  
pp. 164102 ◽  
Author(s):  
H. F. Tian ◽  
J. R. Sun ◽  
H. B. Lü ◽  
K. J. Jin ◽  
H. X. Yang ◽  
...  

2005 ◽  
Vol 37 (2) ◽  
pp. 221-224 ◽  
Author(s):  
Zhouguang Wang ◽  
Takeharu Kato ◽  
Tsukasa Hirayama ◽  
Naoko Kato ◽  
Katsuhiro Sasaki ◽  
...  

2005 ◽  
Vol 907 ◽  
Author(s):  
Katsuhiro Sasaki ◽  
Zhouguang Wang ◽  
Keiichi Fukunaga ◽  
Tsukasa Hirayama ◽  
Kotaro Kuroda ◽  
...  

AbstractElectromagnetic fields presents in some real materials have been observed using electron holography and a simple method named the Shadow Image Distortion (SID) method which we have developed. The in-situ electron holography observation of the electric field surrounding a ceramic particle showed the rapid degradation of dielectric properties of the particle at an elevated temperature. The cross sectional view of mean electrostatic potential distributions in a silicon device has been observed. In-situ electron holography and SID observations showed the electrostatic potential distribution across a reverse biased p-n junction in a compound semiconductor. The SID method using a dedicated tool allowed single-step imaging of 2D maps of electromagnetic field.


2006 ◽  
Vol 26 ◽  
pp. 29-32 ◽  
Author(s):  
A C Twitchett ◽  
T J V Yates ◽  
R E Dunin-Borkowski ◽  
S B Newcomb ◽  
P A Midgley

2005 ◽  
Vol 108-109 ◽  
pp. 603-608 ◽  
Author(s):  
Peter Formanek ◽  
Martin Kittler

We report on electron holography as a promising candidate for diagnostics in silicon technology and research. Electron holography determines the local phase shift of the electron wave passing through a sample. The phase is proportional to the 2D projected electrostatic potential in the sample and thus reveals p-n junctions and, indirectly, doping. We demonstrate detection of submonolayer boron layers in Si and SiGe, measurement of Ge concentration in SiGe and qualitative 2D oxygen mapping in SiO2/Si structures with 0.5 nm resolution, and comparison of doping in two bipolar transistors with different base implant. Resolution and noise limits are discussed.


2006 ◽  
Vol 73 (24) ◽  
Author(s):  
E. Müller ◽  
D. Gerthsen ◽  
P. Brückner ◽  
F. Scholz ◽  
Th. Gruber ◽  
...  

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