Wedge-shaped and flat cross-sections for quantitative characterization of the electrostatic potential distributions across p-n junctions by electron holography

Zhouguang Wang; Takeharu Kato; Tsukasa Hirayama; Naoko Kato; Katsuhiro Sasaki; Hiroyasu Saka

doi:10.1002/sia.1969

Wedge-shaped and flat cross-sections for quantitative characterization of the electrostatic potential distributions across p-n junctions by electron holography

Surface and Interface Analysis ◽

10.1002/sia.1969 ◽

2005 ◽

Vol 37 (2) ◽

pp. 221-224 ◽

Cited By ~ 5

Author(s):

Zhouguang Wang ◽

Takeharu Kato ◽

Tsukasa Hirayama ◽

Naoko Kato ◽

Katsuhiro Sasaki ◽

...

Keyword(s):

Cross Sections ◽

Electrostatic Potential ◽

Electron Holography ◽

Quantitative Characterization

Download Full-text

Electron holography characterization of the electrostatic potential of thin high-κ dielectric film embedded in gate stack

Applied Physics Letters ◽

10.1063/1.3652770 ◽

2011 ◽

Vol 99 (16) ◽

pp. 163506 ◽

Cited By ~ 1

Keyword(s):

Electrostatic Potential ◽

Dielectric Film ◽

Electron Holography ◽

Gate Stack

Download Full-text

Holography Measurement of Mean Inner Potential of Germanium

Microscopy and Microanalysis ◽

10.1017/s1431927600023187 ◽

1998 ◽

Vol 4 (S2) ◽

pp. 612-613

Author(s):

Jing Li ◽

M.R. McCartney ◽

R.E. Dunin-Borkowski ◽

David J. Smith

Keyword(s):

Experimental Data ◽

Ccd Camera ◽

Nanometer Scale ◽

Electron Holography ◽

Quantitative Characterization ◽

Semiconductor Alloy ◽

Holographic Approach ◽

Diffraction Patterns

There is increasing interest in the quantitative characterization of nanometer-scale semiconductor alloy layers, such as those of SiGe or AlGaAs. Electron holography, which has the ability to detect small changes in mean inner potential Vo, can in principle provide information about local changes in composition. However, the measurement of absolute values of Vo is not always straightforward and values for only a few materials are known with confidence. In this study, we measure Vo for Ge using electron holography, and we compare our experimental data with calculations. The holographic approach that we use to measure Vo is described in the paper of Gajdardziska-Josifovska et al. The Ge samples were nominally 90° cleaved wedges from a <100> wafer. Holograms were recorded on a Philips CM200 FEG equipped with a Gatan 794 CCD camera, and data were obtained for several crystal tilts (determined from diffraction patterns) to assess dynamical contributions to the phases.

Download Full-text