Electron holography characterization of the electrostatic potential of thin high-κ dielectric film embedded in gate stack

2011 ◽  
Vol 99 (16) ◽  
pp. 163506 ◽  
Keyword(s):  
Electrostatic Potential ◽  
Dielectric Film ◽  
Electron Holography ◽  
Gate Stack

Wedge-shaped and flat cross-sections for quantitative characterization of the electrostatic potential distributions across p-n junctions by electron holography

2005 ◽  
Vol 37 (2) ◽  
pp. 221-224 ◽  
Author(s):  
Zhouguang Wang ◽  
Takeharu Kato ◽  
Tsukasa Hirayama ◽  
Naoko Kato ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Cross Sections ◽  
Electrostatic Potential ◽  
Electron Holography ◽  
Quantitative Characterization

Electronic trap characterization of the Sc2O3∕La2O3 high-κ gate stack by scanning tunneling microscopy

2008 ◽  
Vol 92 (2) ◽  
pp. 022904 ◽  
Author(s):  
Y. C. Ong ◽  
D. S. Ang ◽  
K. L. Pey ◽  
Z. R. Wang ◽  
S. J. O’Shea ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Gate Stack

Characterization of JEOL 3000f TEM Equipped for Electron Holography

2000 ◽  
Vol 6 (S2) ◽  
pp. 228-229
Author(s):  
M. A. Schofield ◽  
Y. Zhu
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Design Of Experiment ◽  
Electron Holography ◽  
Fringe Spacing ◽  
Interference Fringes ◽  
Transmission Electron ◽  
Careful Design

Quantitative off-axis electron holography in a transmission electron microscope (TEM) requires careful design of experiment specific to instrumental characteristics. For example, the spatial resolution desired for a particular holography experiment imposes requirements on the spacing of the interference fringes to be recorded. This fringe spacing depends upon the geometric configuration of the TEM/electron biprism system, which is experimentally fixed, but also upon the voltage applied to the biprism wire of the holography unit, which is experimentally adjustable. Hence, knowledge of the holographic interference fringe spacing as a function of applied voltage to the electron biprism is essential to the design of a specific holography experiment. Furthermore, additional instrumental parameters, such as the coherence and virtual size of the electron source, for example, affect the quality of recorded holograms through their effect on the contrast of the holographic fringes.

Mapping the electrostatic potential across AlGaN∕AlN∕GaN heterostructures using electron holography

2007 ◽  
Vol 90 (3) ◽  
pp. 032101 ◽  
Author(s):  
Z. H. Wu ◽  
M. Stevens ◽  
F. A. Ponce ◽  
W. Lee ◽  
J. H. Ryou ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Electron Holography

scholarly journals Three-dimensional reconstructions of electrostatic potential distributions with 1.5-nm resolution using off-axis electron holography

Microscopy ◽  
2011 ◽  
Vol 61 (2) ◽  
pp. 77-84 ◽  
Author(s):  
Toshiaki Tanigaki ◽  
Shinji Aizawa ◽  
Takahiro Suzuki ◽  
Akira Tonomura
Keyword(s):  
Electrostatic Potential ◽  
Three Dimensional ◽  
Electron Holography

Fabrication and characterization of a self-aligned gate stack for electronics applications

2021 ◽  
Vol 119 (14) ◽  
pp. 142901
Author(s):  
Amy C. Brummer ◽  
Amar T. Mohabir ◽  
Daniel Aziz ◽  
Michael A. Filler ◽  
Eric M. Vogel
Keyword(s):  
Gate Stack ◽  
Fabrication And Characterization

Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stack

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2386-2389 ◽  
Author(s):  
A. Ohta ◽  
Y. Munetaka ◽  
A. Tsugou ◽  
K. Makihara ◽  
H. Murakami ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
State Density ◽  
Defect State ◽  
Gate Stack

Characterization of the Sc2O3/La2O3 High-κ Gate Stack by STM

2007 ◽  
Author(s):  
Y. C. Ong ◽  
D. S. Ang ◽  
S. J. O’Shea ◽  
K. L. Pey ◽  
T. Kawanago ◽  
...  
Keyword(s):  
Gate Stack
Sign in / Sign up

Export Citation Format

Share Document