scholarly journals Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

APL Materials ◽  
2014 ◽  
Vol 2 (3) ◽  
pp. 032107 ◽  
Author(s):  
A. Lastras-Martínez ◽  
J. Ortega-Gallegos ◽  
L. E. Guevara-Macías ◽  
O. Nuñez-Olvera ◽  
R. E. Balderas-Navarro ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Homoepitaxial Growth ◽  
Reflectance Difference Spectroscopy

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

2002 ◽  
Vol 81 (15) ◽  
pp. 2863-2865 ◽  
Author(s):  
S. Martini ◽  
A. A. Quivy ◽  
E. C. F. da Silva ◽  
J. R. Leite
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Time Determination

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 82 (11) ◽  
pp. 5472-5479 ◽  
Author(s):  
E. J. Tarsa ◽  
B. Heying ◽  
X. H. Wu ◽  
P. Fini ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Homoepitaxial Growth ◽  
Stable Conditions

Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001)

2017 ◽  
Vol 421 ◽  
pp. 608-610 ◽  
Author(s):  
A. Armenta-Franco ◽  
A. Lastras-Martínez ◽  
J. Ortega-Gallegos ◽  
D. Ariza-Flores ◽  
L.E. Guevara-Macías ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxy

1990 ◽  
Vol 101 (1-4) ◽  
pp. 52-55 ◽  
Author(s):  
M. Kitagawa ◽  
Y. Tomomura ◽  
K. Nakanishi ◽  
A. Suzuki ◽  
S. Nakajima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Homoepitaxial Growth

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Homoepitaxial Growth
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