Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 82 (11) ◽  
pp. 5472-5479 ◽  
Author(s):  
E. J. Tarsa ◽  
B. Heying ◽  
X. H. Wu ◽  
P. Fini ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Homoepitaxial Growth ◽  
Stable Conditions

Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxy

1990 ◽  
Vol 101 (1-4) ◽  
pp. 52-55 ◽  
Author(s):  
M. Kitagawa ◽  
Y. Tomomura ◽  
K. Nakanishi ◽  
A. Suzuki ◽  
S. Nakajima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Homoepitaxial Growth

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Homoepitaxial Growth

scholarly journals Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

APL Materials ◽  
2014 ◽  
Vol 2 (3) ◽  
pp. 032107 ◽  
Author(s):  
A. Lastras-Martínez ◽  
J. Ortega-Gallegos ◽  
L. E. Guevara-Macías ◽  
O. Nuñez-Olvera ◽  
R. E. Balderas-Navarro ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Homoepitaxial Growth ◽  
Reflectance Difference Spectroscopy

Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy

1995 ◽  
Vol 67 (19) ◽  
pp. 2848-2850 ◽  
Author(s):  
D. M. Holmes ◽  
J. G. Belk ◽  
J. L. Sudijono ◽  
J. H. Neave ◽  
T. S. Jones ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Homoepitaxial Growth

Homoepitaxial growth of low-resistivity-Al-doped ZnS single crystal films by molecular beam epitaxy

1989 ◽  
Vol 95 (1-4) ◽  
pp. 509-511 ◽  
Author(s):  
Masahiko Kitagawa ◽  
Yoshitaka Tomomura ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Homoepitaxial Growth ◽  
Single Crystal Films ◽  
Crystal Films

Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth

2004 ◽  
Vol 43 (11A) ◽  
pp. 7454-7457 ◽  
Author(s):  
Shuichi Kubo ◽  
Shiro Iwata ◽  
Satoshi Kurai ◽  
Tsunemasa Taguchi ◽  
Keiji Kainosho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Molecular Beam ◽  
Solution Growth ◽  
Homoepitaxial Growth ◽  
Bulk Gan ◽  
Pressure Controlled

Homoepitaxial growth of GaN using molecular beam epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2195-2198 ◽  
Author(s):  
A. Gassmann ◽  
T. Suski ◽  
N. Newman ◽  
C. Kisielowski ◽  
E. Jones ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Homoepitaxial Growth

Phosphorus incorporation during InP(001) homoepitaxial growth by solid source molecular beam epitaxy

2003 ◽  
Vol 531 (3) ◽  
pp. L383-L387 ◽  
Author(s):  
G.W. Barnes ◽  
E.S. Tok ◽  
J.H. Neave ◽  
T.S. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Homoepitaxial Growth
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