Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001)

2017 ◽  
Vol 421 ◽  
pp. 608-610 ◽  
Author(s):  
A. Armenta-Franco ◽  
A. Lastras-Martínez ◽  
J. Ortega-Gallegos ◽  
D. Ariza-Flores ◽  
L.E. Guevara-Macías ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

scholarly journals Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

APL Materials ◽  
2014 ◽  
Vol 2 (3) ◽  
pp. 032107 ◽  
Author(s):  
A. Lastras-Martínez ◽  
J. Ortega-Gallegos ◽  
L. E. Guevara-Macías ◽  
O. Nuñez-Olvera ◽  
R. E. Balderas-Navarro ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Homoepitaxial Growth ◽  
Reflectance Difference Spectroscopy

Real time in situ observation of (001)GaAs in OMCVD by reflectance difference spectroscopy

1992 ◽  
Vol 60-61 ◽  
pp. 534-543 ◽  
Author(s):  
Itaru Kamiya ◽  
D.E. Aspnes ◽  
H. Tanaka ◽  
L.T. Florez ◽  
E. Colas ◽  
...  
Keyword(s):  
Real Time ◽  
In Situ Observation ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth

1988 ◽  
Vol 52 (12) ◽  
pp. 957-959 ◽  
Author(s):  
D. E. Aspnes ◽  
J. P. Harbison ◽  
A. A. Studna ◽  
L. T. Florez
Keyword(s):  
Crystal Growth ◽  
Real Time ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
Spectroscopy System

Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces.

1988 ◽  
Vol 144 ◽  
Author(s):  
E. Colas ◽  
D.E. Aspnes ◽  
R. Bhat ◽  
A.A. Studna ◽  
M.A. Koza ◽  
...  
Keyword(s):  
Real Time ◽  
Structural Changes ◽  
Chemical Vapor ◽  
Growth Surface ◽  
Semiconductor Surface ◽  
Difference Spectroscopy ◽  
Kcal Mole ◽  
Large Size ◽  
Reflectance Difference Spectroscopy

ABSTRACTReflectance-difference spectroscopy (RDS) is a recently developed optical technique that allows to monitor chemical and structural changes at a growing semiconductor surface, in-situ and in real-time. This technique was applied recently to organometallic chemical vapor deposition (OMCVD) on a [100] GaAs growth surface. The results show that submonolayer coverage of reacted species can be followed by this technique, which provided unique insights into the microscopic growth mechanisms. The time, temperature and pressure dependences of surface coverage show that OMCVD growth is controlled by two basic processes with distinct activation energies, i.e. reversible chemisorption (at -26 kcal/mole), and decomposition (at 39 kcal/mole) of trimethylgallium (TMG) at surface lattice sites. The importance of reversible chemisorption, which is of an excluded-volume type, due to the large size of the TMG molecule, had been overlooked until now in the literature, where only one activation energy was used to describe growth kinetics.

Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring

2015 ◽  
Vol 425 ◽  
pp. 21-24 ◽  
Author(s):  
A. Lastras-Martínez ◽  
J. Ortega-Gallegos ◽  
L.E. Guevara-Macías ◽  
O. Nuñez-Olvera ◽  
R.E. Balderas-Navarro ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Monitoring ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy
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