Heavily p-type doped chemical vapor deposition graphene field-effect transistor with current saturation

2013 ◽  
Vol 103 (22) ◽  
pp. 223505 ◽  
Author(s):  
Song-ang Peng ◽  
Zhi Jin ◽  
Peng Ma ◽  
Guang-hui Yu ◽  
Jing-yuan Shi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Graphene Field Effect Transistor ◽  
Current Saturation ◽  
Effect Transistor ◽  
Chemical Vapor Deposition Graphene ◽  
P Type

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

2015 ◽  
Vol 3 (17) ◽  
pp. 4235-4238 ◽  
Author(s):  
Chang-Soo Park ◽  
Yu Zhao ◽  
Yoon Shon ◽  
Im Taek Yoon ◽  
Cheol Jin Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Ferromagnetic Semiconductor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

We report a ferromagnetic graphene field-effect transistor with a band gap.

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