scholarly journals Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride

2011 ◽  
Vol 98 (26) ◽  
pp. 262103 ◽  
Author(s):  
Edwin Kim ◽  
Tianhua Yu ◽  
Eui Sang Song ◽  
Bin Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

2015 ◽  
Vol 3 (17) ◽  
pp. 4235-4238 ◽  
Author(s):  
Chang-Soo Park ◽  
Yu Zhao ◽  
Yoon Shon ◽  
Im Taek Yoon ◽  
Cheol Jin Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Ferromagnetic Semiconductor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

We report a ferromagnetic graphene field-effect transistor with a band gap.

Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride

2014 ◽  
Vol 2 (37) ◽  
pp. 7776-7784 ◽  
Author(s):  
Muhammad Waqas Iqbal ◽  
Muhammad Zahir Iqbal ◽  
Xiaozhan Jin ◽  
Jonghwa Eom ◽  
Chanyong Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Devices

We report the characterization of high-quality chemical-vapor-deposition (CVD)-grown graphene devices on CVD-grown hexagonal boron nitride (h-BN).

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