scholarly journals Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

2013 ◽  
Vol 114 (19) ◽  
pp. 194512 ◽  
Author(s):  
S. Wilking ◽  
S. Ebert ◽  
A. Herguth ◽  
G. Hahn
Keyword(s):  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Hydrogenated Silicon ◽  
Nitride Layers ◽  
Hydrogen Effusion

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Diffusion of Hydrogen and Deuterium in Stack Systems of SixNyHz/SixNyDz and Crystalline Si

2000 ◽  
Vol 609 ◽  
Author(s):  
Christoph Boehme ◽  
Gerald Lucovsky
Keyword(s):  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Rapid Thermal Anneal ◽  
Hydrogenated Silicon ◽  
Bond Density ◽  
Amorphous Hydrogenated Silicon ◽  
Dominant Process ◽  
Diffusion Of Hydrogen

ABSTRACTH/D-, N-H/D- and Si-H/D-bond density changes were investigated in stacks consisting of a Cz-Si substrate, a thin layer of SiO2, amorphous deuterated silicon nitride as well as amorphous hydrogenated silicon nitride in order to see if the post deposition anneal of a-SixNyHz layers on crystalline silicon wafers can actually lead to a migration of H atoms into the Si-bulk, which is an important question in regard to emitter passivation of Si-solar cells.The stacks were grown with remote plasma enhanced chemical vapor deposition (RPECVD). A low temperature (≈200°C) process of down stream injected ammonia (NH3) and silane (SiH4) activated by an upstream injected He-plasma, produced through RF-radiation (13.65MHz) was used. Thermal treatment was executed by ex situ rapid thermal anneal in Ar ambient. For the measurements of H and D bond densities, FTIR was employed while SIMS determined atomic densities of H, D and O in the c-Si/nitride interface region. The experiments showed that H transport in silicon nitride is determined by several mechanisms including diffusion and dissociation processes and that silicon nitride deposited with high ammonia to silane ratios can produce molecular species like ammonia and H2. The study of the reaction dynamics showed that the production of molecular hydrogen is the most dominant process as long as Si-H-bonds are present in the system. After their exhaustion, an ammonia producing reaction prevails that leads with increasing temperatures to lower densities in the nitride films.

Contribution of the Luminescence Phenomena of nc-Si to the Performances of the Industrial mc-Si Solar Cells

2011 ◽  
Vol 324 ◽  
pp. 465-468
Author(s):  
Abdellatif Zerga ◽  
Kamila Benyelles
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Screen Printing ◽  
Silicon Solar Cells ◽  
Homogeneous Distribution ◽  
Hydrogenated Silicon ◽  
Si Solar Cells ◽  
Absolute Efficiency ◽  
Nitride Layers ◽  
P Type

In this study, we attempt the contribution of the silicon nanocrystal nc-Si luminescence phenomena to the performance of the conventional mc-Si solar cells. These nc-Si are embedded in the hydrogenated silicon nitride dielectric layers. The experimental results are obtained by different characterizations. They show that the optimum temperature is around 720°C with a good homogeneous distribution of nc-Si (3-5nm). However, to validate our results on silicon solar cells, we deposited silicon-rich silicon nitride layers on p-type (0.5ohm.cm) and diffused POCl3(40ohm/sq) substrates. Then, we performed thermal annealing at 720°C under mixture of gas (N2/H2) during one hour. The I-V measurements are carried out after the screen printing metallization and they showed 0.4% increase of the absolute efficiency.

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

2017 ◽  
Vol 51 (2) ◽  
pp. 196-202 ◽  
Author(s):  
D. V. Shuleiko ◽  
S. V. Zabotnov ◽  
D. M. Zhigunov ◽  
A. A. Zelenina ◽  
I. A. Kamenskih ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Silicon Nanoclusters
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