Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region

2013 ◽  
Vol 113 (21) ◽  
pp. 214507 ◽  
Author(s):  
Edward Namkyu Cho ◽  
Yong Hyeon Shin ◽  
Ilgu Yun
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Model ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Inversion Region ◽  
Effect Transistor

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

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