Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing
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2006 ◽
Vol 45
(2A)
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pp. 660-665
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2014 ◽
Vol 3
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pp. Q95-Q98
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2010 ◽
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pp. H376
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2006 ◽
Vol 45
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pp. 3462-3465
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2007 ◽
Vol 204
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pp. 1302-1306
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2014 ◽
Vol 31
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pp. 108501
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2009 ◽
Vol 129
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pp. 1332-1335
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