The Effect of Passivation Layers on the Negative Bias Instability of Ga–In–Zn–O Thin Film Transistors under Illumination

2010 ◽  
Vol 13 (11) ◽  
pp. H376 ◽  
Author(s):  
Ji Sim Jung ◽  
Kwang-Hee Lee ◽  
Kyoung Seok Son ◽  
Joon Seok Park ◽  
Tae Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Passivation Layers ◽  
Bias Instability

Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane

2014 ◽  
Vol 1633 ◽  
pp. 139-144 ◽  
Author(s):  
Juan Paolo Bermundo ◽  
Yasuaki Ishikawa ◽  
Haruka Yamazaki ◽  
Toshiaki Nonaka ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Reactive Ion Etching ◽  
Annealing Treatment ◽  
Negative Bias ◽  
Positive Bias ◽  
Ion Etching ◽  
Bias Stress ◽  
Passivation Layers ◽  
Negative Bias Illumination Stress

ABSTRACTPolysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.

scholarly journals Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

2018 ◽  
Vol 9 ◽  
pp. 2573-2580 ◽  
Author(s):  
Dapeng Wang ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Debye Length ◽  
Pulse Mode ◽  
Gate Insulator ◽  
Negative Bias ◽  
Current Voltage ◽  
Bias Instability ◽  
Amorphous Ingazno

The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T IGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the T IGZO when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the T IGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping V GS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the T IGZO was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS.

Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress

2021 ◽  
Vol 21 (8) ◽  
pp. 4277-4284
Author(s):  
Sangmin Lee ◽  
Pyungho Choi ◽  
Minjun Song ◽  
Gaeun Lee ◽  
Nara Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Photon Energy ◽  
Photoelectron Spectroscopy ◽  
Thin Film Transistors ◽  
Bonding Energy ◽  
Negative Bias ◽  
Bias Stress ◽  
Blue Wavelength ◽  
Bias Instability ◽  
Izo Thin Film

In this study, we investigated the threshold voltage (Vth) instability of solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) prior to and after negative bias illumination stress (NBIS) with varying carrier suppressors (Ga, Al, Hf, and Zr). Variations in electrical properties of the IZO-based TFTs as a function of carrier suppressors were attributed to the differences in metal-oxygen bonding energy of the materials, which was numerically verified by calculating the relative oxygen deficient ratio from the X-ray photoelectron spectroscopy analysis. Furthermore, the values of Vth shift (ΔVth) of the devices subjected to negative gate bias stress under 635 nm (red), 530 nm (green), and 480 nm (blue) wavelength light irradiation increased as the incident photon energy increased. IZO TFTs doped with Ga atoms demonstrated weaker metal-oxygen bonding energy compared to the others and exhibited the largest ΔVth. This result was attributed to the suppressor-dependent distribution of neutral oxygen vacancies which determine the degrees of photon energy absorption in the IZO films. Then, the ΔVth instability of IZO-based TFTs under NBIS correlated well with a stretched exponential function.

The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination

2011 ◽  
Vol 32 (9) ◽  
pp. 1251-1253 ◽  
Author(s):  
Hyun-Suk Kim ◽  
Joon Seok Park ◽  
Wan-Joo Maeng ◽  
Kyoung Seok Son ◽  
Tae Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Instability

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors

2015 ◽  
Vol 107 (3) ◽  
pp. 033504 ◽  
Author(s):  
Juan Paolo Bermundo ◽  
Yasuaki Ishikawa ◽  
Haruka Yamazaki ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Inorganic Hybrid ◽  
Passivation Layers
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