Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

2014 ◽  
Vol 3 (5) ◽  
pp. Q95-Q98 ◽  
Author(s):  
Byung Du Ahn ◽  
Hyun-Suk Kim ◽  
Dong-Jin Yun ◽  
Jin-Seong Park ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Water Vapor ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device

2021 ◽  
Author(s):  
Hyungwoo Kim ◽  
Alireza Kashir ◽  
Seungyeol Oh ◽  
Hojung Jang ◽  
Hyunsang Hwang
Keyword(s):  
High Pressure ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

Reducing dielectric loss in CaCu3Ti4O12 thin films by high-pressure oxygen annealing

2015 ◽  
Vol 3 (14) ◽  
pp. 3438-3444 ◽  
Author(s):  
Y. Lin ◽  
D. Y. Feng ◽  
M. Gao ◽  
Y. D. Ji ◽  
L. B. Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Dielectric Loss ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Strain Status

High pressure oxygen annealing could reduce the dielectric loss in CCTO films as well as induce obvious difference in strain status.

Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films

2002 ◽  
Vol 41 (Part 2, No. 10B) ◽  
pp. L1164-L1166 ◽  
Author(s):  
Takeshi Kijima ◽  
Yoshihito Kawashima ◽  
Yasushi Idemoto ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Ferroelectric Thin Films ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

Improved magnetic trapped field in thin-wall YBCO single-domain samples by high-pressure oxygen annealing

2008 ◽  
Vol 151 (1) ◽  
pp. 53-59 ◽  
Author(s):  
Xavier Chaud ◽  
Tatiana Prikhna ◽  
Yaroslav Savchuk ◽  
Anne Joulain ◽  
Evert Haanappel ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Domain ◽  
Thin Wall ◽  
Oxygen Annealing ◽  
Trapped Field ◽  
Pressure Oxygen ◽  
High Pressure Oxygen
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