Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications

2013 ◽  
Vol 102 (12) ◽  
pp. 123506 ◽  
Author(s):  
Tae-Jun Ha ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
High Mobility ◽  
Zro2 Thin Film ◽  
Stability Of Solution ◽  
Zinc Tin Oxide ◽  
Transparent Display ◽  
Photo Stability

scholarly journals New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1004
Author(s):  
Ching-Lin Fan ◽  
Hou-Yen Tsao ◽  
Chun-Yuan Chen ◽  
Pei-Chieh Chou ◽  
Wei-Yu Lin
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
High Mobility ◽  
Active Matrix ◽  
Driving Current ◽  
Zinc Tin Oxide ◽  
Pixel Circuit

In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔVTH_TFT), OLED degradation (ΔVTH_OLED), and the I-R drop of a power line (ΔVDD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm2V−1S−1 as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔVTH_TFT = ±1 V, ΔVDD = 0.5 V, and ΔVTH_OLED = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays.

scholarly journals High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Materials ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 702 ◽  
Author(s):  
Imas Noviyana ◽  
Annisa Dwi Lestari ◽  
Maryane Putri ◽  
Mi-Sook Won ◽  
Jong-Seong Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Zinc Tin Oxide

Bias Stress Stability of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2009 ◽  
Vol 156 (11) ◽  
pp. H808 ◽  
Author(s):  
Youngmin Jeong ◽  
Keunkyu Song ◽  
Dongjo Kim ◽  
Chang Young Koo ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Bias Stress ◽  
Stability Of Solution ◽  
Zinc Tin Oxide

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

2005 ◽  
Vol 86 (1) ◽  
pp. 013503 ◽  
Author(s):  
H. Q. Chiang ◽  
J. F. Wager ◽  
R. L. Hoffman ◽  
J. Jeong ◽  
D. A. Keszler
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer ◽  
Zinc Tin Oxide

scholarly journals Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress

APL Materials ◽  
2015 ◽  
Vol 3 (6) ◽  
pp. 062804 ◽  
Author(s):  
Asal Kiazadeh ◽  
Daniela Salgueiro ◽  
Rita Branquinho ◽  
Joana Pinto ◽  
Henrique L. Gomes ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Operational Stability ◽  
Gate Bias ◽  
Bias Stress ◽  
Sio2 Thin Film ◽  
Stability Of Solution ◽  
Zinc Tin Oxide ◽  
Gate Bias Stress

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

2016 ◽  
Vol 108 (15) ◽  
pp. 152111 ◽  
Author(s):  
Ah Young Hwang ◽  
Sang Tae Kim ◽  
Hyuk Ji ◽  
Yeonwoo Shin ◽  
Jae Kyeong Jeong
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Semiconductors ◽  
Metal Induced Crystallization ◽  
Zinc Tin Oxide ◽  
Induced Crystallization

P-20: Performance Improvement for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

2014 ◽  
Vol 45 (1) ◽  
pp. 1017-1020 ◽  
Author(s):  
Chur-Shyang Fuh ◽  
Po-Tsun Liu ◽  
Yang-Shun Fan ◽  
Chih-Hsiang Chang ◽  
Che-Chia Chang
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide
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