High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

2005 ◽  
Vol 86 (1) ◽  
pp. 013503 ◽  
Author(s):  
H. Q. Chiang ◽  
J. F. Wager ◽  
R. L. Hoffman ◽  
J. Jeong ◽  
D. A. Keszler
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer ◽  
Zinc Tin Oxide

Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors

2018 ◽  
Vol 18 (9) ◽  
pp. 5913-5918 ◽  
Author(s):  
Kiwon Lim ◽  
Pyungho Choi ◽  
Sangsub Kim ◽  
Hyunki Kim ◽  
Minsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Zinc Tin Oxide

scholarly journals High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Materials ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 702 ◽  
Author(s):  
Imas Noviyana ◽  
Annisa Dwi Lestari ◽  
Maryane Putri ◽  
Mi-Sook Won ◽  
Jong-Seong Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Zinc Tin Oxide

Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

2016 ◽  
Vol 108 (15) ◽  
pp. 152111 ◽  
Author(s):  
Ah Young Hwang ◽  
Sang Tae Kim ◽  
Hyuk Ji ◽  
Yeonwoo Shin ◽  
Jae Kyeong Jeong
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Semiconductors ◽  
Metal Induced Crystallization ◽  
Zinc Tin Oxide ◽  
Induced Crystallization

P-20: Performance Improvement for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

2014 ◽  
Vol 45 (1) ◽  
pp. 1017-1020 ◽  
Author(s):  
Chur-Shyang Fuh ◽  
Po-Tsun Liu ◽  
Yang-Shun Fan ◽  
Chih-Hsiang Chang ◽  
Che-Chia Chang
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

Inkjet printed high-mobility indium zinc tin oxide thin film transistors

2009 ◽  
Vol 19 (20) ◽  
pp. 3135 ◽  
Author(s):  
Doo-Hyoung Lee ◽  
Seung-Yeol Han ◽  
Gregory S. Herman ◽  
Chih-hung Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

33.3: High Mobility and Highly Stable Aluminum-doped Indium Zinc Tin Oxide Thin-Film Transistors

2014 ◽  
Vol 45 (1) ◽  
pp. 473-475 ◽  
Author(s):  
Sung Haeng Cho ◽  
Sang-Hee Ko Park ◽  
Chi-Sun Hwang ◽  
Min Ki Ryu ◽  
In Yong Eom ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

scholarly journals New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1004
Author(s):  
Ching-Lin Fan ◽  
Hou-Yen Tsao ◽  
Chun-Yuan Chen ◽  
Pei-Chieh Chou ◽  
Wei-Yu Lin
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
High Mobility ◽  
Active Matrix ◽  
Driving Current ◽  
Zinc Tin Oxide ◽  
Pixel Circuit

In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔVTH_TFT), OLED degradation (ΔVTH_OLED), and the I-R drop of a power line (ΔVDD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm2V−1S−1 as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔVTH_TFT = ±1 V, ΔVDD = 0.5 V, and ΔVTH_OLED = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays.

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