Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films

2013 ◽  
Vol 113 (11) ◽  
pp. 114103 ◽  
Author(s):  
E. Verrelli ◽  
D. Tsoukalas
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Gate Oxide

Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 900-902 ◽  
Author(s):  
Jinzo Watanabe ◽  
Yasuaki Kawai ◽  
Nobuhiro Konishi ◽  
Tadahiro Ohmi
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Gate Oxide ◽  
Low Energy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
High Integrity ◽  
Thin Gate Oxide

Improvement of Ultrathin Oxides by Post-Oxidation Annealing

1996 ◽  
Vol 448 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Mieko Matsumura ◽  
Yasushiro Nishioka
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Gate Oxide ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Oxide Growth ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Ultrathin Oxides ◽  
Voltage Region

AbstractThe low temperature oxidation is effective for the atomically-controlled gate oxide growth. We focused the effects of post-oxidation annealing (POA) and attempted to improve the properties of the low-temperature-grown ultrathin oxides with a thickness of 3nm by POA. POA abruptly reduced the leakage current at a low gate voltage below 1.5V and the interface trap density. The correlation between the interface trap and the leakage current at a low applied voltage region were confirmed. We found that the stressing immunity of the ultrathin oxides grown at a low temperature, 650°C, is drastically improved by POA at 850°C.

Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique

2002 ◽  
Vol 23 (1) ◽  
pp. 28-30 ◽  
Author(s):  
Chao-Chi Hong ◽  
Chang-Yun Chang ◽  
Chaung-Yuan Lee ◽  
Jenn-Gwo Hwu
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Gate Oxide ◽  
Thin Gate Oxide

High-Quality Gate-Oxide Films for Low-Temperature Fabricated Poly-Si TFTs

1989 ◽  
Vol 146 ◽  
Author(s):  
Shiro Suyama ◽  
Akio Okamoto ◽  
Seiiti Shirai ◽  
Tadashi Serikawa
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Drain Current ◽  
Gate Oxide ◽  
Breakdown Field ◽  
Subthreshold Slope ◽  
High Quality ◽  
Argon Mixture ◽  
Sputter Deposited

ABSTRACTHigh-quality gate-oxide films for poly-Si TFTs (Thin Film Transistors) are successfully produced by oxygen-argon sputter deposition at a low temperature (200°C). Silicon-oxide films that are sputter-deposited in an oxygen-argon mixture has higher resistivity and breakdown field than films that are sputterdeposited only in argon and thermal oxides grown on poly-Si. Moreover, TFT field-effect mobilities are considerably improved by mixing oxygen into the sputtering gas, resulting in 350 cm2 /V.sec. Subthreshold slope and threshold voltage are also reduced to 5.5 V and 0.8 V/decade. A temperature-dependence measurement of the drain current shows that these improvements in TFT characteristics result from a lowering of the barrier height at the poly-Si grain boundaries, indicating a reduction in the trap density at these boundaries. Results confirm the usefulness of gate-oxide films that are sputter-deposited in an oxygen-argon mixture, for lowtemperature fabricated poly-Si TFTs.

Very Low Temperature E-gun Evaporated Gate Oxide of TFTs on Plastic Substrates

2001 ◽  
Vol 685 ◽  
Author(s):  
Cheon-Hong Kim ◽  
Sang-Hoon Jung ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Gate Oxide ◽  
High Energy ◽  
Post Treatment ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Hydrogen Atoms ◽  
Plastic Substrates ◽  
Very Low Temperature

AbstractA high-quality silicon dioxide (SiO2) suitable for a gate oxide on plastic substrates is successfully deposited by e-gun evaporation at room temperature. The e-gun evaporated oxide film is free from troublesome hydrogen atoms and high-energy ion damage, which ensures good electrical characteristics. N2O/N2 plasma post-treatment was effective to reduce the flat band voltage and leakage current of the evaporated oxides due to the passivation of high-energy nitrogen and oxygen radicals. In the SiO2 film treated by N2O/N2 plasma for 1 minute, the flat band voltage has been reduced from −2.5V to about −0.5V and the leakage current has been decreased by more than one order. Our experimental results show that very low temperature SiO2 film suitable for a gate insulator of TFTs on the plastic substrates has been successfully obtained by the e-gun evaporation and N2O/N2 plasma post-treatment.

Electrical Properties of Tantalum Based Composite Oxide Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Hannu Kattelus ◽  
Markku Ylilammi ◽  
Jorma Salmi ◽  
Timo Ranta-Aho ◽  
Erjany Kanen ◽  
...  
Keyword(s):  
Leakage Current ◽  
Hafnium Oxide ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layered Composite ◽  
Atomic Layer Epitaxy ◽  
Oxygen Species ◽  
Composite Oxide ◽  
New Class

ABSTRACTTantalum oxide is a widely used insulator in electronic applications requiring high permittivity. When deposited at low temperature, tantalum oxide films, however, often exhibit large leakage current. A common way to reduce leakage is to anneal the films in an ambient containing extremely reactive oxygen species, or at high temperature in dry oxygen. A different approach is to use composite oxide materials. We have studied layered tantalum based oxide films deposited by Atomic Layer Epitaxy, and observed that the leakage current is decreased by several orders of magnitude when a fraction of tantalum oxide is replaced by another oxide, such as aluminum or hafnium oxide. Leakage current density of 40 nA/cm2 in the electric field of 1 MV/cm is attained for unannealed Ta-Hf-O film deposited at 300°C. Layered composite insulators are an interesting new class of materials, and ALE proves to be a useful method for depositing them.

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