Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

2013 ◽  
Vol 102 (5) ◽  
pp. 052905 ◽  
Author(s):  
Hongliang Zhang ◽  
Qing Wan ◽  
Changjin Wan ◽  
Guodong Wu ◽  
Liqiang Zhu
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Proton Conducting ◽  
Transparent Oxide

Paste-type thin-film transistors based on self-supported chitosan membranes

RSC Advances ◽  
2015 ◽  
Vol 5 (127) ◽  
pp. 105084-105089 ◽  
Author(s):  
Guodong Wu ◽  
Hui Xiao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Flexible Substrates ◽  
Logic Function ◽  
Proton Conducting ◽  
Low Voltage Operation ◽  
Chitosan Membranes ◽  
Conducting Membranes

Self-supported chitosan-based proton-conducting membranes were used as both flexible substrates and gate dielectrics for paste-type TFTs with low-voltage operation and logic function.

Low-Voltage InGaZnO Thin-Film Transistors Gated by SiO2 Proton Conducting Films

2014 ◽  
Vol 1033-1034 ◽  
pp. 1176-1181
Author(s):  
Rui Chao Liu ◽  
Hong Liang Zhang ◽  
Run Yuan Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Low Voltage ◽  
Logic Circuit ◽  
Proton Conducting ◽  
Large Current ◽  
Effect Transistor ◽  
Self Assembled

Low-voltage (1.5 V) InGaZnO (IGZO) thin-film transistors (TFTs) gated by the SiO2 proton conducting films were self-assembled by a gradient shadow mask in sputtered self-assembled IGZO channel process. The IGZO TFTs have a high-performance with a large current on/off ratio of ≥1.2×106, a low subthreshold swing of ≤120 mV/decade and a high field-effect mobility of 2.2 ~ 6.9 cm2/V·s. Threshold voltage is tuned by various thicknesses of IGZO channel. Both depletion mode and enhancement mode on the same chip is obtained, which will implement a direct-coupled field-effect transistor logic circuit. Our results demonstrate that the IGZO TFTs are promising logic circuit candidates for portable low-voltage oxide-based devices.

Self-Assembled Low-Power In-Plane-Gate Transparent Oxide-Based Thin Film Transistors Gated by Atomic-Layer-Deposited Al2O3

2013 ◽  
Vol 773 ◽  
pp. 673-677
Author(s):  
Guo Dong Wu ◽  
Hong Liang Zhang ◽  
Zhao Jun Guo
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Atomic Layer ◽  
Device Performance ◽  
Transparent Electronics ◽  
Simple Processing ◽  
Transparent Oxide ◽  
Self Assembled

We report the application of one-shadow-mask self-assembled method for fabricating low-voltage transparent oxide-based thin film transistors (TFTs) gated by atomic-layer-deposited Al2O3with in-plane-gate configuration. These in-plane-gate TFTs exhibit a good device performance with a small subthreshold swing (300 mV/decade), a large on/off ratio (106), and a low operation voltage (5V). The leakage current for in-plane-gate TFT is actually significantly lower, compared with TFT with bottom-gate configuration. This work has provided a good route for fabricating low-power transparent electronics using simple processing method.

Fully Solution-Processed Low-Voltage Driven Transparent Oxide Thin Film Transistors

2018 ◽  
Vol 215 (24) ◽  
pp. 1800192 ◽  
Author(s):  
Bo-Xuan Yang ◽  
Yu-Hsin Chang Chien ◽  
Ting Chang ◽  
Ching-Han Liao ◽  
Cheng-Yi Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Transparent Oxide
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