Paste-type thin-film transistors based on self-supported chitosan membranes

RSC Advances ◽  
2015 ◽  
Vol 5 (127) ◽  
pp. 105084-105089 ◽  
Author(s):  
Guodong Wu ◽  
Hui Xiao

Self-supported chitosan-based proton-conducting membranes were used as both flexible substrates and gate dielectrics for paste-type TFTs with low-voltage operation and logic function.

2008 ◽  
Vol 47 (8) ◽  
pp. 6496-6501 ◽  
Author(s):  
Kang Dae Kim ◽  
Dong Soo Kim ◽  
Chung Kyun Kim ◽  
Chung Kun Song

2019 ◽  
Vol 40 (2) ◽  
pp. 224-227 ◽  
Author(s):  
Xiangyu Wang ◽  
Ya Gao ◽  
Zehua Liu ◽  
Jie Luo ◽  
Qing Wan

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.


2017 ◽  
Vol 50 ◽  
pp. 426-428 ◽  
Author(s):  
Gyo Kitahara ◽  
Keisuke Aoshima ◽  
Jun'ya Tsutsumi ◽  
Hiromi Minemawari ◽  
Shunto Arai ◽  
...  

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